Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

A. Annadi; A. Putra; A. Srivastava; X. Wang; Z. Huang; Z. Q. Liu; T. Venkatesan; Ariando

doi:10.1063/1.4768932

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO₃/SrTiO₃ (100) heterointerfaces

A. Annadi^*
, A. Putra
, A. Srivastava
, X. Wang
, Z. Huang
, Z. Q. Liu
, T. Venkatesan
, Ariando

^*Corresponding author for this work

National University of Singapore

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report evolution of the two-dimensional electron gas behavior at the NdAlO₃/SrTiO₃ heterointerfaces with varying thicknesses of the NdAlO₃ overlayer. The samples with a thicker NdAlO₃ show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO₃ thickness. The T^-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO₃/SrTiO₃ interfaces to the interface strain induced by the overlayers.

Original language	English
Article number	231604
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4768932
State	Published - 3 Dec 2012
Externally published	Yes

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@article{a58634a4c13942d0a7feeece3005b136,

title = "Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces",

abstract = "We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.",

author = "A. Annadi and A. Putra and A. Srivastava and X. Wang and Z. Huang and Liu, \{Z. Q.\} and T. Venkatesan and Ariando",

year = "2012",

month = dec,

day = "3",

doi = "10.1063/1.4768932",

language = "英语",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

AU - Annadi, A.

AU - Putra, A.

AU - Srivastava, A.

AU - Wang, X.

AU - Huang, Z.

AU - Liu, Z. Q.

AU - Venkatesan, T.

AU - Ariando,

PY - 2012/12/3

Y1 - 2012/12/3

N2 - We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.

AB - We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.

UR - https://www.scopus.com/pages/publications/84870899601

U2 - 10.1063/1.4768932

DO - 10.1063/1.4768932

M3 - 文章

AN - SCOPUS:84870899601

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231604

ER -

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO₃/SrTiO₃ (100) heterointerfaces

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