Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

Xiao Peng Hao; Bao Yi Wang; Run Sheng Yu; Long Wei; Hui Wang; De Gang Zhao; Wei Chang Hao

doi:10.1088/0256-307X/25/3/062

Evolution of structural defects in SiO_x films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

Xiao Peng Hao^*
, Bao Yi Wang
, Run Sheng Yu
, Long Wei
, Hui Wang
, De Gang Zhao
, Wei Chang Hao

^*Corresponding author for this work

School of Physics

CAS - Institute of High Energy Physics
University of Chinese Academy of Sciences
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We study the structural defects in the SiO_x film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO₃]^2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO ₃]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO₃]^2- defects still exist in the films.

Original language	English
Pages (from-to)	1034-1037
Number of pages	4
Journal	Chinese Physics Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1088/0256-307X/25/3/062
State	Published - 1 Mar 2008

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title = "Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment",

abstract = "We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO 3]2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2- defects still exist in the films.",

author = "Hao, \{Xiao Peng\} and Wang, \{Bao Yi\} and Yu, \{Run Sheng\} and Long Wei and Hui Wang and Zhao, \{De Gang\} and Hao, \{Wei Chang\}",

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doi = "10.1088/0256-307X/25/3/062",

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T1 - Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

AU - Hao, Xiao Peng

AU - Wang, Bao Yi

AU - Yu, Run Sheng

AU - Wei, Long

AU - Wang, Hui

AU - Zhao, De Gang

AU - Hao, Wei Chang

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO 3]2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2- defects still exist in the films.

AB - We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO 3]2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2- defects still exist in the films.

UR - https://www.scopus.com/pages/publications/41149099619

U2 - 10.1088/0256-307X/25/3/062

DO - 10.1088/0256-307X/25/3/062

M3 - 文章

AN - SCOPUS:41149099619

SN - 0256-307X

VL - 25

SP - 1034

EP - 1037

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 3

ER -

Evolution of structural defects in SiO_x films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

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