Erratum: Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))

Y. Q. Xu; W. F. Su; T. X. Nie; J. Cui; Y. M. Shao; Z. M. Jiang

doi:10.1063/1.3608144

Erratum: Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))

Y. Q. Xu^*
, W. F. Su
, T. X. Nie
, J. Cui
, Y. M. Shao
, Z. M. Jiang

^*Corresponding author for this work

Fudan University

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	019902
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3608144
State	Published - 4 Jul 2011
Externally published	Yes

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10.1063/1.3608144

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AU - Nie, T. X.

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AU - Shao, Y. M.

AU - Jiang, Z. M.

PY - 2011/7/4

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M3 - 评论/辩论

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Erratum: Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))

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