Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

Lei Wang; Kanglin Xiong; Yangkun He; Xing Huang; Jing Xia; Xuanze Li; Yiyi Gu; Huaqiu Cheng; Xiangmin Meng

doi:10.1039/c7ce00428a

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

Lei Wang
, Kanglin Xiong
, Yangkun He
, Xing Huang
, Jing Xia
, Xuanze Li
, Yiyi Gu
, Huaqiu Cheng
, Xiangmin Meng^*

^*Corresponding author for this work

School of Materials Science and Engineering

CAS - Technical Institute of Physics and Chemistry
University of Chinese Academy of Sciences
Yale University
Fritz Haber Institute of the Max Planck Society

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnO_WZ//[2-1-10] ZnS_WZ//[10-1] ZnS_ZB and (0001) ZnO_WZ//(0001) ZnS_WZ//(111) ZnS_ZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

Original language	English
Pages (from-to)	2294-2299
Number of pages	6
Journal	CrystEngComm
Volume	19
Issue number	17
DOIs	https://doi.org/10.1039/c7ce00428a
State	Published - 2017

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@article{760042724d93466da3b01a9e85081450,

title = "Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates",

abstract = "In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20\%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnOWZ//[2-1-10] ZnSWZ//[10-1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.",

author = "Lei Wang and Kanglin Xiong and Yangkun He and Xing Huang and Jing Xia and Xuanze Li and Yiyi Gu and Huaqiu Cheng and Xiangmin Meng",

note = "Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c7ce00428a",

language = "英语",

volume = "19",

pages = "2294--2299",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

AU - Wang, Lei

AU - Xiong, Kanglin

AU - He, Yangkun

AU - Huang, Xing

AU - Xia, Jing

AU - Li, Xuanze

AU - Gu, Yiyi

AU - Cheng, Huaqiu

AU - Meng, Xiangmin

PY - 2017

Y1 - 2017

N2 - In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnOWZ//[2-1-10] ZnSWZ//[10-1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

AB - In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnOWZ//[2-1-10] ZnSWZ//[10-1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

UR - https://www.scopus.com/pages/publications/85021975005

U2 - 10.1039/c7ce00428a

DO - 10.1039/c7ce00428a

M3 - 文章

AN - SCOPUS:85021975005

SN - 1466-8033

VL - 19

SP - 2294

EP - 2299

JO - CrystEngComm

JF - CrystEngComm

IS - 17

ER -

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

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