Epitaxial Growth of Single-Layer Kagome Nanoflakes with Topological Band Inversion

  • Sisheng Duan
  • , Jing Yang You
  • , Jian Gou*
  • , Jie Chen
  • , Yu Li Huang
  • , Meizhuang Liu
  • , Shuo Sun
  • , Yihe Wang
  • , Xiaojiang Yu
  • , Li Wang
  • , Yuan Ping Feng
  • , Yi Yang Sun
  • , Andrew T.S. Wee*
  • , Wei Chen*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The kagome lattice has attracted intense interest with the promise of realizing topological phases built from strongly interacting electrons. However, fabricating two-dimensional (2D) kagome materials with nontrivial topology is still a key challenge. Here, we report the growth of single-layer iron germanide kagome nanoflakes by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we unravel the real-space electronic localization of the kagome flat bands. First-principles calculations demonstrate the topological band inversion, suggesting the topological nature of the experimentally observed edge mode. Apart from the intrinsic topological states that potentially host chiral edge modes, the realization of kagome materials in the 2D limit also holds promise for future studies of geometric frustration.

Original languageEnglish
Pages (from-to)21079-21086
Number of pages8
JournalACS Nano
Volume16
Issue number12
DOIs
StatePublished - 27 Dec 2022
Externally publishedYes

Keywords

  • compact localized states
  • kagome lattice
  • molecular beam epitaxy
  • scanning tunnelling microscopy
  • topological phases

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