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Epitaxial growth mechanism of silicene on Ag(111)

  • Xun Xu
  • , Jincheng Zhuang
  • , Yi Du
  • , Stefan Eilers
  • , Germanas Peleckis
  • , Waikong Yeoh
  • , Xiaolin Wang
  • , Shi Xue Dou
  • , Kehui Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the epitaxial growth mechanism of silicene layers fabricated on a Ag(111) surface by molecular beam epitaxial deposition. The coverage effect and the structural defects have been characterized using scanning tunneling microscopy (STM). It is found that substrate temperature plays an important role in the formation of silicene in different structures. Several kinds of defects are observed in different phases of silicene, which are most likely induced by the low coverage effect and the structural mismatch between the silicene and the Ag(111) surface. The Silicene sheet prefers to first emerge at the terrace edge of the substrate. Our results indicate that the growth mechanism of silicene follows the Stranski-Krastanov growth mode for all structures.

Original languageEnglish
Title of host publicationProceedings of the 2014 International Conference on Nanoscience and Nanotechnology, ICONN 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages28-30
Number of pages3
ISBN (Electronic)9781479935215
DOIs
StatePublished - 21 Nov 2014
Externally publishedYes
Event2014 International Conference on Nanoscience and Nanotechnology, ICONN 2014 - Adelaide, Australia
Duration: 2 Feb 20146 Feb 2014

Publication series

NameProceedings of the 2014 International Conference on Nanoscience and Nanotechnology, ICONN 2014

Conference

Conference2014 International Conference on Nanoscience and Nanotechnology, ICONN 2014
Country/TerritoryAustralia
CityAdelaide
Period2/02/146/02/14

Keywords

  • STM
  • coverage
  • defect
  • epitaxial
  • growth mechanism
  • silicene

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