Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

  • Xiaoxuan Zhao
  • , Boyu Zhang
  • , Nicolas Vernier
  • , Xueying Zhang
  • , Mamour Sall
  • , Tao Xing
  • , Liza Herrera Diez
  • , Carolyna Hepburn
  • , Lin Wang
  • , Gianfranco Durin
  • , Arianna Casiraghi
  • , Mohamed Belmeguenai
  • , Yves Roussigné
  • , Andrei Stashkevich
  • , Salim Mourad Chérif
  • , Jürgen Langer
  • , Berthold Ocker
  • , Samridh Jaiswal
  • , Gerhard Jakob
  • , Mathias Kläui
  • Weisheng Zhao*, Dafiné Ravelosona
*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. Our findings provide insights into the material design and interface control for DW dynamics, as well as for DMI, enabling the development of high-performance spintronic devices based on ultrathin magnetic layers.

Original languageEnglish
Article number122404
JournalApplied Physics Letters
Volume115
Issue number12
DOIs
StatePublished - 16 Sep 2019

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