Enhancement of transition temperature in FexSe 0.5Te0.5 film via iron vacancies

J. C. Zhuang; W. K. Yeoh; X. Y. Cui; J. H. Kim; D. Q. Shi; Z. X. Shi; S. P. Ringer; X. L. Wang; S. X. Dou

doi:10.1063/1.4886995

Enhancement of transition temperature in Fe_xSe _0.5Te_0.5 film via iron vacancies

J. C. Zhuang
, W. K. Yeoh^*
, X. Y. Cui
, J. H. Kim
, D. Q. Shi
, Z. X. Shi
, S. P. Ringer
, X. L. Wang
, S. X. Dou

^*Corresponding author for this work

Southeast University, Nanjing
University of Wollongong
The University of Sydney

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The effects of iron deficiency in Fe_xSe_0.5Te _0.5 thin films (0.8 ≤ x ≤ 1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (T_C) up to 21 K was observed in the most Fe deficient film (x = 0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the Fe_xSe_0.5Te_0.5 films. The enhancement of T_C shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.

Original language	English
Article number	262601
Journal	Applied Physics Letters
Volume	104
Issue number	26
DOIs	https://doi.org/10.1063/1.4886995
State	Published - 30 Jun 2014
Externally published	Yes

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@article{f18ab58b86fe4b6a8e600fec1c1dd728,

title = "Enhancement of transition temperature in FexSe 0.5Te0.5 film via iron vacancies",

abstract = "The effects of iron deficiency in FexSe0.5Te 0.5 thin films (0.8 ≤ x ≤ 1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21 K was observed in the most Fe deficient film (x = 0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.",

author = "Zhuang, \{J. C.\} and Yeoh, \{W. K.\} and Cui, \{X. Y.\} and Kim, \{J. H.\} and Shi, \{D. Q.\} and Shi, \{Z. X.\} and Ringer, \{S. P.\} and Wang, \{X. L.\} and Dou, \{S. X.\}",

year = "2014",

month = jun,

day = "30",

doi = "10.1063/1.4886995",

language = "英语",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Enhancement of transition temperature in FexSe 0.5Te0.5 film via iron vacancies

AU - Zhuang, J. C.

AU - Yeoh, W. K.

AU - Cui, X. Y.

AU - Kim, J. H.

AU - Shi, D. Q.

AU - Shi, Z. X.

AU - Ringer, S. P.

AU - Wang, X. L.

AU - Dou, S. X.

PY - 2014/6/30

Y1 - 2014/6/30

N2 - The effects of iron deficiency in FexSe0.5Te 0.5 thin films (0.8 ≤ x ≤ 1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21 K was observed in the most Fe deficient film (x = 0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.

AB - The effects of iron deficiency in FexSe0.5Te 0.5 thin films (0.8 ≤ x ≤ 1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21 K was observed in the most Fe deficient film (x = 0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.

UR - https://www.scopus.com/pages/publications/84905666070

U2 - 10.1063/1.4886995

DO - 10.1063/1.4886995

M3 - 文章

AN - SCOPUS:84905666070

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262601

ER -

Enhancement of transition temperature in Fe_xSe _0.5Te_0.5 film via iron vacancies

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