Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

Yuan Zhang; Paul W.M. Blom

doi:10.1063/1.3464560

Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

Yuan Zhang^*
, Paul W.M. Blom

^*Corresponding author for this work

University of Groningen
Holst Centre

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p ₀, from 2× 1016 to 2× 10¹⁷ cm^-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p₀, which can be explained by doping induced surface charges.

Original language	English
Article number	083303
Journal	Applied Physics Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.3464560
State	Published - 23 Aug 2010
Externally published	Yes

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title = "Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping",

abstract = "The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.",

author = "Yuan Zhang and Blom, \{Paul W.M.\}",

year = "2010",

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doi = "10.1063/1.3464560",

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volume = "97",

journal = "Applied Physics Letters",

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T1 - Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

AU - Zhang, Yuan

AU - Blom, Paul W.M.

PY - 2010/8/23

Y1 - 2010/8/23

N2 - The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.

AB - The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.

UR - https://www.scopus.com/pages/publications/77956216927

U2 - 10.1063/1.3464560

DO - 10.1063/1.3464560

M3 - 文章

AN - SCOPUS:77956216927

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083303

ER -

Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

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