Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

Yong Liu; Jinle Lan; Wei Xu; Yaochun Liu; Yan Ling Pei; Bo Cheng; Da Bo Liu; Yuan Hua Lin; Li Dong Zhao

doi:10.1039/c3cc44578j

Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

Yong Liu^*
, Jinle Lan
, Wei Xu
, Yaochun Liu
, Yan Ling Pei
, Bo Cheng
, Da Bo Liu
, Yuan Hua Lin
, Li Dong Zhao

^*Corresponding author for this work

School of Materials Science and Engineering

Beijing Institute of Aeronautical Materials
Tsinghua University
CAS - Institute of High Energy Physics
Northwestern University

Research output: Contribution to journal › Article › peer-review

132 Scopus citations

Abstract

Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe_0.94Te_0.06O.

Original language	English
Pages (from-to)	8075-8077
Number of pages	3
Journal	Chemical Communications
Volume	49
Issue number	73
DOIs	https://doi.org/10.1039/c3cc44578j
State	Published - 15 Aug 2013

Access to Document

10.1039/c3cc44578j

Cite this

@article{3c147858a557473bbb8e0621b66942ba,

title = "Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning",

abstract = "Upon 20\% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.",

author = "Yong Liu and Jinle Lan and Wei Xu and Yaochun Liu and Pei, \{Yan Ling\} and Bo Cheng and Liu, \{Da Bo\} and Lin, \{Yuan Hua\} and Zhao, \{Li Dong\}",

year = "2013",

month = aug,

day = "15",

doi = "10.1039/c3cc44578j",

language = "英语",

volume = "49",

pages = "8075--8077",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "73",

}

TY - JOUR

T1 - Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

AU - Liu, Yong

AU - Lan, Jinle

AU - Xu, Wei

AU - Liu, Yaochun

AU - Pei, Yan Ling

AU - Cheng, Bo

AU - Liu, Da Bo

AU - Lin, Yuan Hua

AU - Zhao, Li Dong

PY - 2013/8/15

Y1 - 2013/8/15

N2 - Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.

AB - Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.

UR - https://www.scopus.com/pages/publications/84882318111

U2 - 10.1039/c3cc44578j

DO - 10.1039/c3cc44578j

M3 - 文章

AN - SCOPUS:84882318111

SN - 1359-7345

VL - 49

SP - 8075

EP - 8077

JO - Chemical Communications

JF - Chemical Communications

IS - 73

ER -

Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

Abstract

Access to Document

Other files and links

Fingerprint

Cite this