Enhanced Terahertz Transmission in MoS2/Silicon Heterostructure

Sibo Hao; Yicheng Cheng; Jiangping Zhou; Hongting Xiong; Peidi Yang; Xinhou Chen; Wanyin Xiong; Feng He; Qiao Li; Jianwei Liu; Jungang Miao; Shuang Qiao; Xiaojun Wu

doi:10.1109/IRMMW-THz50926.2021.9567043

Enhanced Terahertz Transmission in MoS₂/Silicon Heterostructure

Sibo Hao
, Yicheng Cheng
, Jiangping Zhou
, Hongting Xiong
, Peidi Yang
, Xinhou Chen
, Wanyin Xiong
, Feng He
, Qiao Li
, Jianwei Liu
, Jungang Miao
, Shuang Qiao
, Xiaojun Wu

Beihang University
Hebei University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

MoS₂/Silicon heterostructure is experimentally demonstrated to have terahertz (THz) transmission enhancement capability. THz spectrum measurements unveil 5% expansion compared with the Si substrate under heat excitations while photon injection induced enhancement originates from THz absorption reduction. The images of THz spots can extend those spectroscopic evolution processes. These findings not only lay a fundamental understanding of properties within transition metal dichalcogenides (TMDs) at THz frequency range, but also envision a novel class of compact, tunable THz modulation and gain devices.

Original language	English
Title of host publication	2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021
Publisher	IEEE Computer Society
ISBN (Electronic)	9781728194240
DOIs	https://doi.org/10.1109/IRMMW-THz50926.2021.9567043
State	Published - 2021
Event	46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021 - Chengdu, China Duration: 30 Aug 2021 → 3 Sep 2021

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2021-August
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021
Country/Territory	China
City	Chengdu
Period	30/08/21 → 3/09/21

Access to Document

10.1109/IRMMW-THz50926.2021.9567043

Cite this

Hao, S., Cheng, Y., Zhou, J., Xiong, H., Yang, P., Chen, X., Xiong, W., He, F., Li, Q., Liu, J., Miao, J., Qiao, S., & Wu, X. (2021). Enhanced Terahertz Transmission in MoS₂/Silicon Heterostructure. In 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2021-August). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz50926.2021.9567043

@inproceedings{19277e0c10b840e8a993f9137aafd66f,

title = "Enhanced Terahertz Transmission in MoS2/Silicon Heterostructure",

abstract = "MoS2/Silicon heterostructure is experimentally demonstrated to have terahertz (THz) transmission enhancement capability. THz spectrum measurements unveil 5\% expansion compared with the Si substrate under heat excitations while photon injection induced enhancement originates from THz absorption reduction. The images of THz spots can extend those spectroscopic evolution processes. These findings not only lay a fundamental understanding of properties within transition metal dichalcogenides (TMDs) at THz frequency range, but also envision a novel class of compact, tunable THz modulation and gain devices.",

author = "Sibo Hao and Yicheng Cheng and Jiangping Zhou and Hongting Xiong and Peidi Yang and Xinhou Chen and Wanyin Xiong and Feng He and Qiao Li and Jianwei Liu and Jungang Miao and Shuang Qiao and Xiaojun Wu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021 ; Conference date: 30-08-2021 Through 03-09-2021",

year = "2021",

doi = "10.1109/IRMMW-THz50926.2021.9567043",

language = "英语",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE Computer Society",

booktitle = "2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021",

address = "美国",

}

Hao, S, Cheng, Y, Zhou, J, Xiong, H, Yang, P, Chen, X, Xiong, W, He, F , Li, Q , Liu, J , Miao, J, Qiao, S & Wu, X 2021, Enhanced Terahertz Transmission in MoS₂/Silicon Heterostructure. in 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2021-August, IEEE Computer Society, 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021, Chengdu, China, 30/08/21. https://doi.org/10.1109/IRMMW-THz50926.2021.9567043

Enhanced Terahertz Transmission in MoS₂/Silicon Heterostructure. / Hao, Sibo; Cheng, Yicheng; Zhou, Jiangping et al.
2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021. IEEE Computer Society, 2021. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2021-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhanced Terahertz Transmission in MoS2/Silicon Heterostructure

AU - Hao, Sibo

AU - Cheng, Yicheng

AU - Zhou, Jiangping

AU - Xiong, Hongting

AU - Yang, Peidi

AU - Chen, Xinhou

AU - Xiong, Wanyin

AU - He, Feng

AU - Li, Qiao

AU - Liu, Jianwei

AU - Miao, Jungang

AU - Qiao, Shuang

AU - Wu, Xiaojun

PY - 2021

Y1 - 2021

N2 - MoS2/Silicon heterostructure is experimentally demonstrated to have terahertz (THz) transmission enhancement capability. THz spectrum measurements unveil 5% expansion compared with the Si substrate under heat excitations while photon injection induced enhancement originates from THz absorption reduction. The images of THz spots can extend those spectroscopic evolution processes. These findings not only lay a fundamental understanding of properties within transition metal dichalcogenides (TMDs) at THz frequency range, but also envision a novel class of compact, tunable THz modulation and gain devices.

AB - MoS2/Silicon heterostructure is experimentally demonstrated to have terahertz (THz) transmission enhancement capability. THz spectrum measurements unveil 5% expansion compared with the Si substrate under heat excitations while photon injection induced enhancement originates from THz absorption reduction. The images of THz spots can extend those spectroscopic evolution processes. These findings not only lay a fundamental understanding of properties within transition metal dichalcogenides (TMDs) at THz frequency range, but also envision a novel class of compact, tunable THz modulation and gain devices.

UR - https://www.scopus.com/pages/publications/85125337289

U2 - 10.1109/IRMMW-THz50926.2021.9567043

DO - 10.1109/IRMMW-THz50926.2021.9567043

M3 - 会议稿件

AN - SCOPUS:85125337289

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021

PB - IEEE Computer Society

T2 - 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021

Y2 - 30 August 2021 through 3 September 2021

ER -

Hao S, Cheng Y, Zhou J, Xiong H, Yang P, Chen X et al. Enhanced Terahertz Transmission in MoS₂/Silicon Heterostructure. In 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021. IEEE Computer Society. 2021. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz50926.2021.9567043