Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Ning Han; Fengyun Wang; Alvin T. Hui; Jared J. Hou; Guangcun Shan; Fei Xiu; Tak Fu Hung; Johnny C. Ho

doi:10.1109/ASQED.2011.6111746

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Ning Han^*
, Fengyun Wang
, Alvin T. Hui
, Jared J. Hou
, Guangcun Shan
, Fei Xiu
, Tak Fu Hung
, Johnny C. Ho

^*Corresponding author for this work

City University of Hong Kong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO ₂/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

Original language	English
Title of host publication	Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Pages	207-210
Number of pages	4
DOIs	https://doi.org/10.1109/ASQED.2011.6111746
State	Published - 2011
Externally published	Yes
Event	3rd Asia Symposium on Quality Electronic Design, ASQED 2011 - Kuala Lumpur, Malaysia Duration: 19 Jul 2011 → 20 Jul 2011

Publication series

Name	Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

Conference

Conference	3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Country/Territory	Malaysia
City	Kuala Lumpur
Period	19/07/11 → 20/07/11

Keywords

GaAs nanowires
Ni catalysts
solid-source chemical vapor deposition

Access to Document

10.1109/ASQED.2011.6111746

Cite this

Han, N., Wang, F., Hui, A. T., Hou, J. J., Shan, G., Xiu, F., Hung, T. F., & Ho, J. C. (2011). Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield. In Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011 (pp. 207-210). Article 6111746 (Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011). https://doi.org/10.1109/ASQED.2011.6111746

@inproceedings{a847fb0b1d4f4190af43ea08c08c4986,

title = "Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield",

abstract = "Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.",

keywords = "GaAs nanowires, Ni catalysts, solid-source chemical vapor deposition",

author = "Ning Han and Fengyun Wang and Hui, \{Alvin T.\} and Hou, \{Jared J.\} and Guangcun Shan and Fei Xiu and Hung, \{Tak Fu\} and Ho, \{Johnny C.\}",

year = "2011",

doi = "10.1109/ASQED.2011.6111746",

language = "英语",

isbn = "9781457701443",

series = "Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011",

pages = "207--210",

booktitle = "Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011",

note = "3rd Asia Symposium on Quality Electronic Design, ASQED 2011 ; Conference date: 19-07-2011 Through 20-07-2011",

}

Han, N, Wang, F, Hui, AT, Hou, JJ, Shan, G, Xiu, F, Hung, TF & Ho, JC 2011, Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield. in Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011., 6111746, Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011, pp. 207-210, 3rd Asia Symposium on Quality Electronic Design, ASQED 2011, Kuala Lumpur, Malaysia, 19/07/11. https://doi.org/10.1109/ASQED.2011.6111746

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield. / Han, Ning; Wang, Fengyun; Hui, Alvin T. et al.
Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011. 2011. p. 207-210 6111746 (Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

AU - Han, Ning

AU - Wang, Fengyun

AU - Hui, Alvin T.

AU - Hou, Jared J.

AU - Shan, Guangcun

AU - Xiu, Fei

AU - Hung, Tak Fu

AU - Ho, Johnny C.

PY - 2011

Y1 - 2011

N2 - Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

AB - Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

KW - GaAs nanowires

KW - Ni catalysts

KW - solid-source chemical vapor deposition

UR - https://www.scopus.com/pages/publications/84862953852

U2 - 10.1109/ASQED.2011.6111746

DO - 10.1109/ASQED.2011.6111746

M3 - 会议稿件

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SN - 9781457701443

T3 - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

SP - 207

EP - 210

BT - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

T2 - 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

Y2 - 19 July 2011 through 20 July 2011

ER -

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

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