Enhanced Gas Sensitivity Characteristics of NO₂ Sensor Based on a Silicon Micropillar Design Strategy at Room Temperature

In this study, two types of gas sensors—silicone-based interdigital electrode and silicon micropillar sensors based on rGO and rGO/SnO₂—were fabricated. Their gas-sensing performance was investigated at room temperature. First, interdigital electrodes of different channel widths were fabricated to investigate the impact of the channel width parameter. Subsequently, the rGO/SnO₂ doping ratio in the composite material was varied to identify the optimal composition for gas sensitivity. Additionally, triangular and square-arrayed silicon micropillar substrates were fabricated via photolithography and inductively coupled plasma etching. The rGO/SnO₂-based gas sensor on a silicon micropillar substrate exhibited an ultra-high specific surface area. The triangular micropillar arrangement of rGO/SnO₂-160 demonstrates the best performance, showing approximately 14% higher response and a 106 s reduction in response time compared with interdigital electrode sensors spray-coated with the same concentration of rGO/SnO₂ when tested at room temperature under 250 ppm NO₂. The optimized sensor achieves a detection limit as low as 5 ppm and maintains high responsiveness, even in conditions of 60% relative humidity (RH). Additionally, the repeatability, selectivity, and stability of the sensor were evaluated. Finally, structural and morphological characterization was conducted using XRD, SEM, TEM, and Raman spectroscopy, which confirmed the successful modification of rGO with SnO₂.