Enhanced dielectric properties of ferroelectric polymer composites induced by metal-semiconductor Zn-ZnO core-shell structure

Ye Zhang; Yao Wang; Yuan Deng; Mao Li; Jinbo Bai

doi:10.1021/am2016156

Enhanced dielectric properties of ferroelectric polymer composites induced by metal-semiconductor Zn-ZnO core-shell structure

Ye Zhang
, Yao Wang
, Yuan Deng^*
, Mao Li
, Jinbo Bai

^*Corresponding author for this work

School of Materials Science and Engineering

Beihang University
Ecole Centrale Paris-Supelec

Research output: Contribution to journal › Article › peer-review

159 Scopus citations

Abstract

The effect of metal-semiconductor Zn-ZnO core-shell structure on dielectric properties of polyvinylidene fluoride (PVDF) composites was investigated. Zn-ZnO fillers were obtained by the heat-treatment of raw Zn particles under air. The enhanced dielectric constant of Zn-ZnO/PVDF composites results from the duplex interfacial polarizations induced by metal-semiconductor interface and semiconductor-insulator interface. The dielectric loss is still low because of the presence of ZnO semiconductor shell between Zn metal core and insulator PVDF matrix. Furthermore, the dielectric performance of as-prepared composites could be further optimized through adjusting the thickness of semiconductor shell.

Original language	English
Pages (from-to)	65-68
Number of pages	4
Journal	ACS Applied Materials and Interfaces
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/am2016156
State	Published - 25 Jan 2012

Keywords

dielectric constant
dielectric loss
metal-semiconductor interface
polymer composites
semiconductor shell

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10.1021/am2016156

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abstract = "The effect of metal-semiconductor Zn-ZnO core-shell structure on dielectric properties of polyvinylidene fluoride (PVDF) composites was investigated. Zn-ZnO fillers were obtained by the heat-treatment of raw Zn particles under air. The enhanced dielectric constant of Zn-ZnO/PVDF composites results from the duplex interfacial polarizations induced by metal-semiconductor interface and semiconductor-insulator interface. The dielectric loss is still low because of the presence of ZnO semiconductor shell between Zn metal core and insulator PVDF matrix. Furthermore, the dielectric performance of as-prepared composites could be further optimized through adjusting the thickness of semiconductor shell.",

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T1 - Enhanced dielectric properties of ferroelectric polymer composites induced by metal-semiconductor Zn-ZnO core-shell structure

AU - Zhang, Ye

AU - Wang, Yao

AU - Deng, Yuan

AU - Li, Mao

AU - Bai, Jinbo

PY - 2012/1/25

Y1 - 2012/1/25

N2 - The effect of metal-semiconductor Zn-ZnO core-shell structure on dielectric properties of polyvinylidene fluoride (PVDF) composites was investigated. Zn-ZnO fillers were obtained by the heat-treatment of raw Zn particles under air. The enhanced dielectric constant of Zn-ZnO/PVDF composites results from the duplex interfacial polarizations induced by metal-semiconductor interface and semiconductor-insulator interface. The dielectric loss is still low because of the presence of ZnO semiconductor shell between Zn metal core and insulator PVDF matrix. Furthermore, the dielectric performance of as-prepared composites could be further optimized through adjusting the thickness of semiconductor shell.

AB - The effect of metal-semiconductor Zn-ZnO core-shell structure on dielectric properties of polyvinylidene fluoride (PVDF) composites was investigated. Zn-ZnO fillers were obtained by the heat-treatment of raw Zn particles under air. The enhanced dielectric constant of Zn-ZnO/PVDF composites results from the duplex interfacial polarizations induced by metal-semiconductor interface and semiconductor-insulator interface. The dielectric loss is still low because of the presence of ZnO semiconductor shell between Zn metal core and insulator PVDF matrix. Furthermore, the dielectric performance of as-prepared composites could be further optimized through adjusting the thickness of semiconductor shell.

KW - dielectric constant

KW - dielectric loss

KW - metal-semiconductor interface

KW - polymer composites

KW - semiconductor shell

UR - https://www.scopus.com/pages/publications/84863044794

U2 - 10.1021/am2016156

DO - 10.1021/am2016156

M3 - 文章

AN - SCOPUS:84863044794

SN - 1944-8244

VL - 4

SP - 65

EP - 68

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 1

ER -

Enhanced dielectric properties of ferroelectric polymer composites induced by metal-semiconductor Zn-ZnO core-shell structure

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Keywords

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