TY - GEN
T1 - Energy efficient magnetic tunnel junction based hybrid LSI using multi-threshold UTBB-FD-SOI device
AU - Cai, Hao
AU - Wang, You
AU - Naviner, Lirida A.B.
AU - Kang, Wang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2017 ACM.
PY - 2017/5/10
Y1 - 2017/5/10
N2 - The energy scalability of ultra-low power nonvolatile (NV) large-scale integration (LSI) is explored in this paper. Multithreshold computing (super/near/sub-Vt) in hybrid CMOS/magnetic tunnel junction (MTJ) circuits are investigated based on SPICE-compatible MTJ model and fully depleted silicon on insulator (FD-SOI) devices. Ultra-low supply voltage operation bottlenecks associated with performance loss, parametric variations and function failure are studied in differential pair-based sensing circuit, MTJ writing/control circuit and other building blocks. A case study is performed with three typical NV-IP-ops (NV-FF), which are implemented with 28nm FD-SOI low Vt (LVT) device and forward back-bias. Results show that MTJ writing/control circuit must operate at nominal supply (super-Vt) region to guarantee MTJ switching; sensing circuit is configured with nearVt operation (0.6V) with robustness consideration, whereas other parts could be implemented with near/sub-Vt computing to achieve ultra-low power consumption and energy efficient operations.
AB - The energy scalability of ultra-low power nonvolatile (NV) large-scale integration (LSI) is explored in this paper. Multithreshold computing (super/near/sub-Vt) in hybrid CMOS/magnetic tunnel junction (MTJ) circuits are investigated based on SPICE-compatible MTJ model and fully depleted silicon on insulator (FD-SOI) devices. Ultra-low supply voltage operation bottlenecks associated with performance loss, parametric variations and function failure are studied in differential pair-based sensing circuit, MTJ writing/control circuit and other building blocks. A case study is performed with three typical NV-IP-ops (NV-FF), which are implemented with 28nm FD-SOI low Vt (LVT) device and forward back-bias. Results show that MTJ writing/control circuit must operate at nominal supply (super-Vt) region to guarantee MTJ switching; sensing circuit is configured with nearVt operation (0.6V) with robustness consideration, whereas other parts could be implemented with near/sub-Vt computing to achieve ultra-low power consumption and energy efficient operations.
KW - 28nm UTBB-FD-SOI
KW - Forward back-bias
KW - Magnetic tunnel junction
KW - Near/sub-threshold computing
KW - Nonvolatile LSI
KW - Ultra-low power
UR - https://www.scopus.com/pages/publications/85021223338
U2 - 10.1145/3060403.3060413
DO - 10.1145/3060403.3060413
M3 - 会议稿件
AN - SCOPUS:85021223338
T3 - Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
SP - 23
EP - 28
BT - GLSVLSI 2017 - Proceedings of the Great Lakes Symposium on VLSI 2017
PB - Association for Computing Machinery
T2 - 27th Great Lakes Symposium on VLSI, GLSVLSI 2017
Y2 - 10 May 2017 through 12 May 2017
ER -