Electronic and magnetic properties of transition metal decorated monolayer GaS

Inducing controllable magnetism in two dimensional non-magnetic materials is very important for realizing dilute magnetic semiconductor. Using density functional theory, we have systematically investigated the effect of surface adsorption of various 3d transition metal (TM) atoms (Sc-Cu) on the electronic and magnetic properties of the monolayer GaS as representative of group-IIIA metal-monochalcogenide. We find that all adatoms favor the top site on the Ga atom. All the TM atoms, except for the Cr and Mn, can bond strongly to the GaS monolayer with sizable binding energies. Moreover, the TM decorated GaS monolayers exhibit interesting magnetic properties, which arise from the strong spin-dependent hybridization of the TM 3d orbitals with S 3p and Ga 4s orbitals. After examining the magnetic interaction between two same types of TM atoms, we find that most of them exhibit antiferromagnetic coupling, while Fe and Co atoms can form long-range ferromagnetism. Furthermore, we find that the electronic properties of metal decorated systems strongly rely on the type of TM adatom and the adsorption concentration. In particular, the spin-polarized semiconducting state can be realized in Fe doped system for a large range of doping concentrations. These findings indicate that the TM decorated GaS monolayers have potential device applications in next-generation electronics and spintronics.