Electromigration induced stress in through-silicon-via (TSV)

Fei Su; Zixing Lu; Ping Liu; Weijia Li

doi:10.1109/ICEPT.2013.6756606

Electromigration induced stress in through-silicon-via (TSV)

Fei Su
, Zixing Lu
, Ping Liu
, Weijia Li

School of Aeronautic Science and Engineering

Beihang University

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.

Original language	English
Pages	896-902
Number of pages	7
DOIs	https://doi.org/10.1109/ICEPT.2013.6756606
State	Published - 2013
Event	2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013 - Dalian, China Duration: 11 Aug 2013 → 14 Aug 2013

Conference

Conference	2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013
Country/Territory	China
City	Dalian
Period	11/08/13 → 14/08/13

Keywords

Electromigration induced stress (EIS)
Finite element
through-silicon-via (TSV)

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10.1109/ICEPT.2013.6756606

Cite this

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title = "Electromigration induced stress in through-silicon-via (TSV)",

abstract = "In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.",

keywords = "Electromigration induced stress (EIS), Finite element, through-silicon-via (TSV)",

author = "Fei Su and Zixing Lu and Ping Liu and Weijia Li",

year = "2013",

doi = "10.1109/ICEPT.2013.6756606",

language = "英语",

pages = "896--902",

note = "2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013 ; Conference date: 11-08-2013 Through 14-08-2013",

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TY - CONF

T1 - Electromigration induced stress in through-silicon-via (TSV)

AU - Su, Fei

AU - Lu, Zixing

AU - Liu, Ping

AU - Li, Weijia

PY - 2013

Y1 - 2013

N2 - In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.

AB - In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.

KW - Electromigration induced stress (EIS)

KW - Finite element

KW - through-silicon-via (TSV)

UR - https://www.scopus.com/pages/publications/84898048250

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DO - 10.1109/ICEPT.2013.6756606

M3 - 论文

AN - SCOPUS:84898048250

SP - 896

EP - 902

T2 - 2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013

Y2 - 11 August 2013 through 14 August 2013

ER -

Electromigration induced stress in through-silicon-via (TSV)

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Keywords

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