Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

doi:10.1016/j.mssp.2006.10.011

Electrical and interfacial characteristics of nanolaminate (Al₂O₃/ZrO₂/Al₂O₃) gate stack on fully depleted SiGe-on-insulator

Zengfeng Di
, Miao Zhang
, Weili Liu
, Qinwo Shen
, Zhitang Song
, Chenglu Lin
, Anping Huang
, Paul K. Chu^*

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology
City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The structural and electrical characteristics of a novel nanolaminate Al₂O₃/ZrO₂/Al₂O₃ high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al₂O₃ (2.5 nm)/ZrO₂ (4.5 nm)/Al₂O₃ (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.

Original language	English
Pages (from-to)	959-963
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2006.10.011
State	Published - Dec 2006
Externally published	Yes

Keywords

Capacitance-voltage
High-k gate stack
Oxidation
SiGe-on-insulator

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10.1016/j.mssp.2006.10.011

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@article{dab137e72a44421b913ccbfedbc46347,

title = "Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator",

abstract = "The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.",

keywords = "Capacitance-voltage, High-k gate stack, Oxidation, SiGe-on-insulator",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Qinwo Shen and Zhitang Song and Chenglu Lin and Anping Huang and Chu, \{Paul K.\}",

year = "2006",

month = dec,

doi = "10.1016/j.mssp.2006.10.011",

language = "英语",

volume = "9",

pages = "959--963",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

number = "6",

}

TY - JOUR

T1 - Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Shen, Qinwo

AU - Song, Zhitang

AU - Lin, Chenglu

AU - Huang, Anping

AU - Chu, Paul K.

PY - 2006/12

Y1 - 2006/12

N2 - The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.

AB - The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.

KW - Capacitance-voltage

KW - High-k gate stack

KW - Oxidation

KW - SiGe-on-insulator

UR - https://www.scopus.com/pages/publications/33846094003

U2 - 10.1016/j.mssp.2006.10.011

DO - 10.1016/j.mssp.2006.10.011

M3 - 文章

AN - SCOPUS:33846094003

SN - 1369-8001

VL - 9

SP - 959

EP - 963

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Electrical and interfacial characteristics of nanolaminate (Al₂O₃/ZrO₂/Al₂O₃) gate stack on fully depleted SiGe-on-insulator

Abstract

Keywords

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