Abstract
With the expanding power demands and increasing use of renewable energy resources, microgrids have been widely supported. The wide bandgap semiconductor devices with higher blocking voltage capabilities and higher switching speed such as silicon carbide (SiC) devices will become a critical component in building the microgrid. In this paper, the power loss and current harmonics of both Si-IGBT and SiC-MOSFET based inverters are investigated and compared in low voltage (LV) microgrid applications, respectively. And the experimental results show that the application of SiC devices greatly increases the energy efficiency and improves the power quality in microgrid.
| Original language | English |
|---|---|
| Pages (from-to) | 298-303 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 103 |
| DOIs | |
| State | Published - 1 Dec 2016 |
| Event | Applied Energy Symposium and Submit: Renewable Energy Integration with Mini/Microgrid, REM 2016 - Maldives, Maldives Duration: 19 Apr 2016 → 21 Apr 2016 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- current harmonics
- filter
- microgrid
- power loss
- silicon carbide (SiC)
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