Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel

Zhicao Feng; Xuequn Cheng; Chaofang Dong; Lin Xu; Xiaogang Li

doi:10.1016/j.jnucmat.2010.10.010

Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel

Zhicao Feng
, Xuequn Cheng^*
, Chaofang Dong
, Lin Xu
, Xiaogang Li

^*Corresponding author for this work

University of Science and Technology Beijing

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott-Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott-Schottky analysis and PDM, the key parameters for passive film, donor density N_d, flat-band potential E_fb and diffusivity of defects D₀ were calculated. The results display that N _d(1-7 × 10²⁷m^-3) and D₀(1-18 × 10^-16cm²/s) increase and E_fb value reduces with the dissolved oxygen in solution.

Original language	English
Pages (from-to)	171-177
Number of pages	7
Journal	Journal of Nuclear Materials
Volume	407
Issue number	3
DOIs	https://doi.org/10.1016/j.jnucmat.2010.10.010
State	Published - 31 Dec 2010
Externally published	Yes

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10.1016/j.jnucmat.2010.10.010

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title = "Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel",

abstract = "The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott-Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott-Schottky analysis and PDM, the key parameters for passive film, donor density Nd, flat-band potential Efb and diffusivity of defects D0 were calculated. The results display that N d(1-7 {\texttimes} 1027m-3) and D0(1-18 {\texttimes} 10-16cm2/s) increase and Efb value reduces with the dissolved oxygen in solution.",

author = "Zhicao Feng and Xuequn Cheng and Chaofang Dong and Lin Xu and Xiaogang Li",

year = "2010",

month = dec,

day = "31",

doi = "10.1016/j.jnucmat.2010.10.010",

language = "英语",

volume = "407",

pages = "171--177",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel

AU - Feng, Zhicao

AU - Cheng, Xuequn

AU - Dong, Chaofang

AU - Xu, Lin

AU - Li, Xiaogang

PY - 2010/12/31

Y1 - 2010/12/31

N2 - The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott-Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott-Schottky analysis and PDM, the key parameters for passive film, donor density Nd, flat-band potential Efb and diffusivity of defects D0 were calculated. The results display that N d(1-7 × 1027m-3) and D0(1-18 × 10-16cm2/s) increase and Efb value reduces with the dissolved oxygen in solution.

AB - The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott-Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott-Schottky analysis and PDM, the key parameters for passive film, donor density Nd, flat-band potential Efb and diffusivity of defects D0 were calculated. The results display that N d(1-7 × 1027m-3) and D0(1-18 × 10-16cm2/s) increase and Efb value reduces with the dissolved oxygen in solution.

UR - https://www.scopus.com/pages/publications/78649454751

U2 - 10.1016/j.jnucmat.2010.10.010

DO - 10.1016/j.jnucmat.2010.10.010

M3 - 文章

AN - SCOPUS:78649454751

SN - 0022-3115

VL - 407

SP - 171

EP - 177

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

IS - 3

ER -

Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel

Abstract

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