Effects of CF4 addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH4+SiH 4+H2

Guoju Wang; Bo Wang; Anping Huang; Mankang Zhu; Biben Wang; Hui Yan

doi:10.1116/1.1622674

Effects of CF₄ addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH₄+SiH₄+H₂

Guoju Wang
, Bo Wang^*
, Anping Huang
, Mankang Zhu
, Biben Wang^*
, Hui Yan

^*Corresponding author for this work

Beijing University of Technology
Liaocheng University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

SiC films were deposited by HFCVD using CH₄, SiH₄, and H₂ gases. It was evidenced that the oxygen contamination in the films is reduced by adding a little CF₄ in the deposition process.

Original language	English
Pages (from-to)	1993-1995
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1622674
State	Published - Nov 2003
Externally published	Yes

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@article{642fe4973db744bebd6c26b361748272,

title = "Effects of CF4 addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH4+SiH 4+H2",

abstract = "SiC films were deposited by HFCVD using CH4, SiH4, and H2 gases. It was evidenced that the oxygen contamination in the films is reduced by adding a little CF4 in the deposition process.",

author = "Guoju Wang and Bo Wang and Anping Huang and Mankang Zhu and Biben Wang and Hui Yan",

year = "2003",

month = nov,

doi = "10.1116/1.1622674",

language = "英语",

volume = "21",

pages = "1993--1995",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Effects of CF4 addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH4+SiH 4+H2

AU - Wang, Guoju

AU - Wang, Bo

AU - Huang, Anping

AU - Zhu, Mankang

AU - Wang, Biben

AU - Yan, Hui

PY - 2003/11

Y1 - 2003/11

N2 - SiC films were deposited by HFCVD using CH4, SiH4, and H2 gases. It was evidenced that the oxygen contamination in the films is reduced by adding a little CF4 in the deposition process.

AB - SiC films were deposited by HFCVD using CH4, SiH4, and H2 gases. It was evidenced that the oxygen contamination in the films is reduced by adding a little CF4 in the deposition process.

UR - https://www.scopus.com/pages/publications/0842344413

U2 - 10.1116/1.1622674

DO - 10.1116/1.1622674

M3 - 文章

AN - SCOPUS:0842344413

SN - 0734-2101

VL - 21

SP - 1993

EP - 1995

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

ER -

Effects of CF₄ addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH₄+SiH₄+H₂

Abstract

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