Abstract
A TiN film was fabricated between a molybdenum-silicon-boron coating and a niobium-silicon based alloy by magnetron sputtering. Interdiffusion characteristics involving the coating and substrate were studied in the isothermal oxidation test at 1250 °C. The results showed that TiN interlayer effectively blocked interdiffusion between the coating and its substrate. The performance of the TiN interlayer in blocking diffusion was assessed via first-principles modeling. The study revealed that the diffusion barrier energy of Si in TiN (0.850 eV/atom) exceeds that of MoSi2 (0.032 eV/atom) and Nb (0.072 eV/atom).
| Original language | English |
|---|---|
| Article number | 130584 |
| Journal | Materials Chemistry and Physics |
| Volume | 337 |
| DOIs | |
| State | Published - 1 Jun 2025 |
Keywords
- First-principles calculation
- Magnetron sputtering
- Molybdenum-silicon-boron coating
- SPS
- TiN diffusion barrier
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