Effect of cooling oxygen pressure on the photoconductivity in Bi 0.9La0.1FeO3 thin films

R. L. Gao; H. W. Yang; Y. S. Chen; J. R. Sun; Y. G. Zhao; B. G. Shen

doi:10.1016/j.jallcom.2013.12.237

Effect of cooling oxygen pressure on the photoconductivity in Bi _0.9La_0.1FeO₃ thin films

R. L. Gao^*
, H. W. Yang
, Y. S. Chen
, J. R. Sun
, Y. G. Zhao
, B. G. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A direct correlation is observed between the magnitude of the photoconductivity and cooling oxygen pressure in Bi_0.9La _0.1FeO₃ films. With lower oxygen vacancies (V _Os) films cooled in higher oxygen pressure show obviously decrease in leakage current. Higher level of V_Os led to higher free carrier concentration and hence is believed to be responsible for the increase in higher photoconductivity. It is evident that BLFO films with higher V_Os cooled in lower oxygen pressure and/or light illumination induce a higher carrier injection, n_i and thus the conductive mechanism is dominated by space-charge-limited conduction.

Original language	English
Pages (from-to)	346-350
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	591
DOIs	https://doi.org/10.1016/j.jallcom.2013.12.237
State	Published - 5 Apr 2014
Externally published	Yes

Keywords

BiFeO
Leakage current
Oxygen vacancies
Photoconductivity

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10.1016/j.jallcom.2013.12.237

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title = "Effect of cooling oxygen pressure on the photoconductivity in Bi 0.9La0.1FeO3 thin films",

abstract = "A direct correlation is observed between the magnitude of the photoconductivity and cooling oxygen pressure in Bi0.9La 0.1FeO3 films. With lower oxygen vacancies (V Os) films cooled in higher oxygen pressure show obviously decrease in leakage current. Higher level of VOs led to higher free carrier concentration and hence is believed to be responsible for the increase in higher photoconductivity. It is evident that BLFO films with higher VOs cooled in lower oxygen pressure and/or light illumination induce a higher carrier injection, ni and thus the conductive mechanism is dominated by space-charge-limited conduction.",

keywords = "BiFeO, Leakage current, Oxygen vacancies, Photoconductivity",

author = "Gao, \{R. L.\} and Yang, \{H. W.\} and Chen, \{Y. S.\} and Sun, \{J. R.\} and Zhao, \{Y. G.\} and Shen, \{B. G.\}",

year = "2014",

month = apr,

day = "5",

doi = "10.1016/j.jallcom.2013.12.237",

language = "英语",

volume = "591",

pages = "346--350",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of cooling oxygen pressure on the photoconductivity in Bi 0.9La0.1FeO3 thin films

AU - Gao, R. L.

AU - Yang, H. W.

AU - Chen, Y. S.

AU - Sun, J. R.

AU - Zhao, Y. G.

AU - Shen, B. G.

PY - 2014/4/5

Y1 - 2014/4/5

N2 - A direct correlation is observed between the magnitude of the photoconductivity and cooling oxygen pressure in Bi0.9La 0.1FeO3 films. With lower oxygen vacancies (V Os) films cooled in higher oxygen pressure show obviously decrease in leakage current. Higher level of VOs led to higher free carrier concentration and hence is believed to be responsible for the increase in higher photoconductivity. It is evident that BLFO films with higher VOs cooled in lower oxygen pressure and/or light illumination induce a higher carrier injection, ni and thus the conductive mechanism is dominated by space-charge-limited conduction.

AB - A direct correlation is observed between the magnitude of the photoconductivity and cooling oxygen pressure in Bi0.9La 0.1FeO3 films. With lower oxygen vacancies (V Os) films cooled in higher oxygen pressure show obviously decrease in leakage current. Higher level of VOs led to higher free carrier concentration and hence is believed to be responsible for the increase in higher photoconductivity. It is evident that BLFO films with higher VOs cooled in lower oxygen pressure and/or light illumination induce a higher carrier injection, ni and thus the conductive mechanism is dominated by space-charge-limited conduction.

KW - BiFeO

KW - Leakage current

KW - Oxygen vacancies

KW - Photoconductivity

UR - https://www.scopus.com/pages/publications/84893055206

U2 - 10.1016/j.jallcom.2013.12.237

DO - 10.1016/j.jallcom.2013.12.237

M3 - 文章

AN - SCOPUS:84893055206

SN - 0925-8388

VL - 591

SP - 346

EP - 350

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Effect of cooling oxygen pressure on the photoconductivity in Bi _0.9La_0.1FeO₃ thin films

Abstract

Keywords

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