Dynamic compact model of spin-transfer torque based magnetic tunnel junction (mtj)

  • Louis Barthélemy Faber*
  • , Weisheng Zhao
  • , Jacques Oliver Klein
  • , Thibaut Devolder
  • , Claude Chappert
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The integration of Magnetic Tunnel Junctions (MTJ) above CMOS circuits in embedded Magnetic RAM (MRAM) or Magnetic FPGA (MFPGA) could bring to digital circuits major advantages associated to non-volatile capability such as instant on/off, multi-context FPGA and zero standby power consumption. A complete simulation model for the hybrid MTJ/CMOS design is presented in this paper. Based on the recently demonstrated Spin-Transfer Torque (STT) writing approach which promises to lower the switching current down to ~120uA, we have added to the previous static model the dynamic behaviors as well as the switching probability and the thermal effects. The model has been developed in Verilog-A language and implemented on Cadence Virtuoso platform. Many experimental parameters are included in this model to improve the simulation accuracy. Simulations demonstrate that the model can be efficiently used to design hybrid MTJ/CMOS circuits.

Original languageEnglish
Title of host publicationProceedings of the DTIS'09 - 2009 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era
Pages130-135
Number of pages6
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS'09 - Cairo, Egypt
Duration: 6 Apr 20097 Apr 2009

Publication series

NameProceedings of the DTIS'09 - 2009 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Conference

Conference2009 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS'09
Country/TerritoryEgypt
CityCairo
Period6/04/097/04/09

Keywords

  • Dynamic and static behavoirs
  • High speed
  • Low power
  • MRAM
  • MTJ
  • STT
  • Thermal effects

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