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Diode-pumped passively mode-locked Nd:YAG laser at 1338 nm with a semiconductor saturable absorber mirror

  • Ying Yang
  • , Jin Long Xu
  • , Jing Liang He*
  • , Xiu Qin Yang
  • , Bing Yuan Zhang
  • , He Yang
  • , Shan De Liu
  • , Bai Tao Zhang
  • *Corresponding author for this work
  • Shandong University

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate a diode-end-pumped passively mode-locked 1338 nm Nd:YAG laser with a semiconductor saturable absorber mirror. At the absorbed pump power of 8.89W, an average output power of 1.12W was obtained with a slope efficiency of 14%. The pulse width was 22.4 ps with a repetition rate of 63.9 MHz, corresponding to a peak power of 782 W. In addition, the bandwidth of the mode-locking spectrum is as narrow as 20.44 GHz, which shows the potential application in long-distance ranging and fiber information transmission because of the low dispersion of these ultrashort pulses.

Original languageEnglish
Pages (from-to)6713-6716
Number of pages4
JournalApplied Optics
Volume50
Issue number36
DOIs
StatePublished - 20 Dec 2011
Externally publishedYes

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