Dielectric characteristics of Si-added and Si-doped TbMnO3

Cong Lu; Yimin Cui

doi:10.1016/j.physb.2013.09.030

Dielectric characteristics of Si-added and Si-doped TbMnO₃

Cong Lu
, Yimin Cui^*

^*Corresponding author for this work

School of Physics

Beihang University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Polycrystalline Si-added TbMnSi_xO₃ (x=0.05, 0.1) and Si-doped Tb_1-xMnSi_xO₃, TbMn _1-xSi_xO₃ (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77-350 K and a frequency range of 0.1-200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (~10⁵) at room temperature was observed in TbMnSi _0.1O₃, and the values of ε′(T) at other frequencies can reach around 10⁴. It turns out that the addition of element Si changes dielectric properties of TbMnO₃ remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram).

Original language	English
Pages (from-to)	58-63
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	432
DOIs	https://doi.org/10.1016/j.physb.2013.09.030
State	Published - 2014

Keywords

Complex impedance
Dielectric characteristics
Si-added Si-doped
TbMnO

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title = "Dielectric characteristics of Si-added and Si-doped TbMnO3",

abstract = "Polycrystalline Si-added TbMnSixO3 (x=0.05, 0.1) and Si-doped Tb1-xMnSixO3, TbMn 1-xSixO3 (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77-350 K and a frequency range of 0.1-200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (\textasciitilde{}105) at room temperature was observed in TbMnSi 0.1O3, and the values of ε′(T) at other frequencies can reach around 104. It turns out that the addition of element Si changes dielectric properties of TbMnO3 remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram).",

keywords = "Complex impedance, Dielectric characteristics, Si-added Si-doped, TbMnO",

author = "Cong Lu and Yimin Cui",

year = "2014",

doi = "10.1016/j.physb.2013.09.030",

language = "英语",

volume = "432",

pages = "58--63",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Dielectric characteristics of Si-added and Si-doped TbMnO3

AU - Lu, Cong

AU - Cui, Yimin

PY - 2014

Y1 - 2014

N2 - Polycrystalline Si-added TbMnSixO3 (x=0.05, 0.1) and Si-doped Tb1-xMnSixO3, TbMn 1-xSixO3 (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77-350 K and a frequency range of 0.1-200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (~105) at room temperature was observed in TbMnSi 0.1O3, and the values of ε′(T) at other frequencies can reach around 104. It turns out that the addition of element Si changes dielectric properties of TbMnO3 remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram).

AB - Polycrystalline Si-added TbMnSixO3 (x=0.05, 0.1) and Si-doped Tb1-xMnSixO3, TbMn 1-xSixO3 (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77-350 K and a frequency range of 0.1-200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (~105) at room temperature was observed in TbMnSi 0.1O3, and the values of ε′(T) at other frequencies can reach around 104. It turns out that the addition of element Si changes dielectric properties of TbMnO3 remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram).

KW - Complex impedance

KW - Dielectric characteristics

KW - Si-added Si-doped

KW - TbMnO

UR - https://www.scopus.com/pages/publications/84885587910

U2 - 10.1016/j.physb.2013.09.030

DO - 10.1016/j.physb.2013.09.030

M3 - 文章

AN - SCOPUS:84885587910

SN - 0921-4526

VL - 432

SP - 58

EP - 63

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Dielectric characteristics of Si-added and Si-doped TbMnO₃

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Keywords

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