Dielectric characteristics of Ga doped TbMnO3

Jianxun Xu; Yimin Cui

doi:10.1016/j.mseb.2012.11.025

Dielectric characteristics of Ga doped TbMnO₃

Jianxun Xu
, Yimin Cui^*

^*Corresponding author for this work

School of Physics

Beihang University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Low-frequency (0.1-200 kHz) dielectric properties of Tb _1-xGa_xMnO₃ and TbGa_yMn _1-yO₃ (x, y = 0.05, 0.1, 0.2, 0.3, 0.4) ceramic composites, which were synthesized by conventional solid-state reaction, were investigated in the temperature range from 77 to 350 K. Both dielectric constants and loss tangent (tan δ) increase with increasing temperature and decrease with increasing frequency, respectively. Interestingly, the dielectric constants of Tb_1-xGa_xMnO₃ are as large as that of the parent TbMnO₃, while the loss tangent reduces remarkably and less than 1 at high frequencies. These improvements demonstrate that Ga doped TbMnO₃ may have potential applications.

Original language	English
Pages (from-to)	316-320
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	178
Issue number	5
DOIs	https://doi.org/10.1016/j.mseb.2012.11.025
State	Published - 20 Mar 2013

Keywords

Dielectric characteristics
Manganites

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10.1016/j.mseb.2012.11.025

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title = "Dielectric characteristics of Ga doped TbMnO3",

abstract = "Low-frequency (0.1-200 kHz) dielectric properties of Tb 1-xGaxMnO3 and TbGayMn 1-yO3 (x, y = 0.05, 0.1, 0.2, 0.3, 0.4) ceramic composites, which were synthesized by conventional solid-state reaction, were investigated in the temperature range from 77 to 350 K. Both dielectric constants and loss tangent (tan δ) increase with increasing temperature and decrease with increasing frequency, respectively. Interestingly, the dielectric constants of Tb1-xGaxMnO3 are as large as that of the parent TbMnO3, while the loss tangent reduces remarkably and less than 1 at high frequencies. These improvements demonstrate that Ga doped TbMnO3 may have potential applications.",

keywords = "Dielectric characteristics, Manganites",

author = "Jianxun Xu and Yimin Cui",

year = "2013",

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doi = "10.1016/j.mseb.2012.11.025",

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T1 - Dielectric characteristics of Ga doped TbMnO3

AU - Xu, Jianxun

AU - Cui, Yimin

PY - 2013/3/20

Y1 - 2013/3/20

N2 - Low-frequency (0.1-200 kHz) dielectric properties of Tb 1-xGaxMnO3 and TbGayMn 1-yO3 (x, y = 0.05, 0.1, 0.2, 0.3, 0.4) ceramic composites, which were synthesized by conventional solid-state reaction, were investigated in the temperature range from 77 to 350 K. Both dielectric constants and loss tangent (tan δ) increase with increasing temperature and decrease with increasing frequency, respectively. Interestingly, the dielectric constants of Tb1-xGaxMnO3 are as large as that of the parent TbMnO3, while the loss tangent reduces remarkably and less than 1 at high frequencies. These improvements demonstrate that Ga doped TbMnO3 may have potential applications.

AB - Low-frequency (0.1-200 kHz) dielectric properties of Tb 1-xGaxMnO3 and TbGayMn 1-yO3 (x, y = 0.05, 0.1, 0.2, 0.3, 0.4) ceramic composites, which were synthesized by conventional solid-state reaction, were investigated in the temperature range from 77 to 350 K. Both dielectric constants and loss tangent (tan δ) increase with increasing temperature and decrease with increasing frequency, respectively. Interestingly, the dielectric constants of Tb1-xGaxMnO3 are as large as that of the parent TbMnO3, while the loss tangent reduces remarkably and less than 1 at high frequencies. These improvements demonstrate that Ga doped TbMnO3 may have potential applications.

KW - Dielectric characteristics

KW - Manganites

UR - https://www.scopus.com/pages/publications/84872852618

U2 - 10.1016/j.mseb.2012.11.025

DO - 10.1016/j.mseb.2012.11.025

M3 - 文章

AN - SCOPUS:84872852618

SN - 0921-5107

VL - 178

SP - 316

EP - 320

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 5

ER -

Dielectric characteristics of Ga doped TbMnO₃

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