Development of a high mass-resolution TOF-ERDA system for a wide mass range from hydrogen to middle heavy elements

  • Wan Hong*
  • , Shinjiro Hayakawa
  • , Kuniko Maeda
  • , Shigekazu Fukuda
  • , Minoru Yanokura
  • , Michi Aratani
  • , Kazue Kimura
  • , Yohichi Gohshi
  • , Isao Tanihata
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A new ERDA system using time of flight (TOF) detection was set up to realize both higher mass resolution and lower detection limit in RIEKN. The TOF spectrometer using a charged-particle detector and a time detector, and the data-acquisition system comprising CAMAC modules and a personal computer were installed. The mass resolution and the depth resolution of the system for a Si wafer have been determined using 20Ne, 40Ar and 136Xe ions as probes. The incident energies were 20.0 MeV for Ne, 41.5 MeV and 22.6 MeV for Ar and 138.1 MeV for Xe, respectively. The mass resolutions of Si were found to be from 1.90 for 41.5 MeV Ar to 3.32 for 22.6 MeV Ar. Also, the depth resolutions were determined from 1.67 × 1017 atoms/cm2 for 20.0 MeV Ne to 2.67 × 1017 atoms/cm2 for 138.1 MeV Xe near to the sample surface. A PIQ film and a superconductor sample, YBa2Cu3O7. x, were measured using Ar accelerated to 41.5 MeV. H, C, N and O in the PIQ film and Y, Ba, Cu and O in the superconductor sample could be measured simultaneously and were clearly separated.

Original languageEnglish
Pages (from-to)365-368
Number of pages4
JournalAnalytical Sciences
Volume13
Issue numberSUPPL.
DOIs
StatePublished - 1997
Externally publishedYes

Keywords

  • Depth resolution
  • Light element analysis
  • Mass resolution
  • TOF-ERDA

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