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Design of RF Front-end Electromagnetic Protection Limiter

  • Yining Cheng*
  • , Peiran Liu
  • , Xiao Li
  • , Yingwei Chen
  • , Shixiong Liang
  • , Dawei Liu
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The limiter plays an important role in protecting the back-end sensitive devices in the radio frequency (RF) receiving system. In this paper, a limiter with fast-response capacity based on a GaAs Schottky barrier diode (SBDs) is designed and taped out to verify. In order to reduce the error of simulation, we propose a design method based on field-circuit co-simulation. Through the experiment, the limiter has low insertion less than 0.5 dB from 1 to 2 GHz, and its voltage standing wave ratio (VSWR) is less than 1.2.

Original languageEnglish
Title of host publicationISEMC 2025 - 8th International Symposium on Electromagnetic Compatibility, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331579159
DOIs
StatePublished - 2025
Event8th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2025 - Hefei, China
Duration: 10 Oct 202512 Oct 2025

Publication series

NameISEMC 2025 - 8th International Symposium on Electromagnetic Compatibility, Proceedings

Conference

Conference8th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2025
Country/TerritoryChina
CityHefei
Period10/10/2512/10/25

Keywords

  • fast-response
  • field-circuit co-simulation
  • GaAs
  • limiter
  • SBD

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