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Design of low-voltage CMOS amplifier with high EMI immunity

  • Beihang University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A low-voltage bulk-driven amplifier with high electromagnetic interference (EMI) immunity is proposed. To improve EMI immunity of the bulk-driven amplifier, a partial positive feedback enhances its equivalent transconductance, an input voltage-drop structure modifies its DC nonlinearity, and a dual input-stage ensures the desired AC feature. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier: the offset voltage is less than 50mV over the whole considered frequency range.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
StatePublished - 13 Mar 2014
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: 18 Jun 201420 Jun 2014

Publication series

Name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/TerritoryChina
CityChengdu
Period18/06/1420/06/14

Keywords

  • DC nonlinearity
  • bulk-driven amplifier
  • electromagnetic interference (EMI) immunity
  • low-voltage

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