Design of low-voltage CMOS amplifier with high electromagnetic interference immunity

Hui Xin Bai; Hong Ge Li; Shu Guo Xie; Dong Lin Su

doi:10.3969/j.issn.0372-2112.2015.09.028

Design of low-voltage CMOS amplifier with high electromagnetic interference immunity

School of Electronic and Information Engineering

Beihang University

Research output: Contribution to journal › Article › peer-review

Abstract

Based on CMOS bulk-driven structure, a low-voltage amplifier with high electromagnetic interference (EMI) immunity is proposed. In the circuit, a partial positive feedback enhances its effective transconductance and an input voltage-drop structure modifies its direct current (DC) nonlinearity. For the overall amplifier, a dual input-stage guarantees its good alternating current (AC) feature, and a symmetrical topology ensures its symmetry and symmetrical slew rate (SR). The amplifier was implemented in a 0.35 μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier. The results show that the offset voltage of the proposed amplifier is less than 50 mV and the output power spectrum density (PSD) at 10 kHz is 33 dBm lower than that of the classical structure.

Original language	English
Pages (from-to)	1870-1874
Number of pages	5
Journal	Tien Tzu Hsueh Pao/Acta Electronica Sinica
Volume	43
Issue number	9
DOIs	https://doi.org/10.3969/j.issn.0372-2112.2015.09.028
State	Published - 1 Sep 2015

Keywords

CMOS bulk-driven
Direct current (DC) nonlinearity
Electromagnetic interference (EMI) immunity
Low-voltage amplifier

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10.3969/j.issn.0372-2112.2015.09.028

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title = "Design of low-voltage CMOS amplifier with high electromagnetic interference immunity",

abstract = "Based on CMOS bulk-driven structure, a low-voltage amplifier with high electromagnetic interference (EMI) immunity is proposed. In the circuit, a partial positive feedback enhances its effective transconductance and an input voltage-drop structure modifies its direct current (DC) nonlinearity. For the overall amplifier, a dual input-stage guarantees its good alternating current (AC) feature, and a symmetrical topology ensures its symmetry and symmetrical slew rate (SR). The amplifier was implemented in a 0.35 μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier. The results show that the offset voltage of the proposed amplifier is less than 50 mV and the output power spectrum density (PSD) at 10 kHz is 33 dBm lower than that of the classical structure.",

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doi = "10.3969/j.issn.0372-2112.2015.09.028",

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AU - Bai, Hui Xin

AU - Li, Hong Ge

AU - Xie, Shu Guo

AU - Su, Dong Lin

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Y1 - 2015/9/1

N2 - Based on CMOS bulk-driven structure, a low-voltage amplifier with high electromagnetic interference (EMI) immunity is proposed. In the circuit, a partial positive feedback enhances its effective transconductance and an input voltage-drop structure modifies its direct current (DC) nonlinearity. For the overall amplifier, a dual input-stage guarantees its good alternating current (AC) feature, and a symmetrical topology ensures its symmetry and symmetrical slew rate (SR). The amplifier was implemented in a 0.35 μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier. The results show that the offset voltage of the proposed amplifier is less than 50 mV and the output power spectrum density (PSD) at 10 kHz is 33 dBm lower than that of the classical structure.

AB - Based on CMOS bulk-driven structure, a low-voltage amplifier with high electromagnetic interference (EMI) immunity is proposed. In the circuit, a partial positive feedback enhances its effective transconductance and an input voltage-drop structure modifies its direct current (DC) nonlinearity. For the overall amplifier, a dual input-stage guarantees its good alternating current (AC) feature, and a symmetrical topology ensures its symmetry and symmetrical slew rate (SR). The amplifier was implemented in a 0.35 μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier. The results show that the offset voltage of the proposed amplifier is less than 50 mV and the output power spectrum density (PSD) at 10 kHz is 33 dBm lower than that of the classical structure.

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KW - Electromagnetic interference (EMI) immunity

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Design of low-voltage CMOS amplifier with high electromagnetic interference immunity

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