Abstract
Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O3) and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm2) p-NiO/β-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of 10-8 A (at -200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of β-Ga2O3 for applications in advanced radiation monitoring.
| Original language | English |
|---|---|
| Pages (from-to) | 187-190 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 46 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2025 |
| Externally published | Yes |
Keywords
- Ultra-wide bandgap semiconductors
- heterojunction diode
- thermal neutron detector
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