Demonstration of β-Ga2O3-Based Thermal Neutron Detector

  • Xiangdong Meng
  • , Xinyi Pei
  • , Yuncheng Han*
  • , Na Sun
  • , Zhaoxuan Fang
  • , Lei Ren
  • , Rui Zhang
  • , Lianxin Zhang
  • , Fang Fang Ren
  • , Song Feng
  • , Dan Xiao
  • , Size Chen
  • , Taosheng Li
  • , Shulin Gu
  • , Rong Zhang
  • , Jiandong Ye*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O3) and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm2) p-NiO/β-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of 10-8 A (at -200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of β-Ga2O3 for applications in advanced radiation monitoring.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalIEEE Electron Device Letters
Volume46
Issue number2
DOIs
StatePublished - 2025
Externally publishedYes

Keywords

  • Ultra-wide bandgap semiconductors
  • heterojunction diode
  • thermal neutron detector

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