Defects in ion implantation and annealing studied by atomistic model

Min Yu; Rong Wang; Huihui Ji; Xiaokang Shi; Kai Zhan; Yangyuan Wang; Jinyu Zhang; Hideki Oka

Defects in ion implantation and annealing studied by atomistic model

Min Yu^*
, Rong Wang
, Huihui Ji
, Xiaokang Shi
, Kai Zhan
, Yangyuan Wang
, Jinyu Zhang
, Hideki Oka

^*Corresponding author for this work

Peking University
Fujitsu

Research output: Contribution to conference › Paper › peer-review

Abstract

Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of amorphization ion implantation and that of kinetic Monte Carlo method in simulation of annealing. Roughness at amorphous/crystal (a/c) interface is interpreted as transition field and related to the steepness of defects profile. The dissipation of Si extended defects are simulated for both 40kev and 5kev Si implantation. Evolution of extended defects for low energy implantation is well simulated. The simulation indicates that at the initial stage of annealing, the density of extended defects should be larger than that predicted by +1 model.

Original language	English
Pages	1053-1056
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

Keywords

Annealing
Implantation
Shallow junction
Simulation

Cite this

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title = "Defects in ion implantation and annealing studied by atomistic model",

abstract = "Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of amorphization ion implantation and that of kinetic Monte Carlo method in simulation of annealing. Roughness at amorphous/crystal (a/c) interface is interpreted as transition field and related to the steepness of defects profile. The dissipation of Si extended defects are simulated for both 40kev and 5kev Si implantation. Evolution of extended defects for low energy implantation is well simulated. The simulation indicates that at the initial stage of annealing, the density of extended defects should be larger than that predicted by +1 model.",

keywords = "Annealing, Implantation, Shallow junction, Simulation",

author = "Min Yu and Rong Wang and Huihui Ji and Xiaokang Shi and Kai Zhan and Yangyuan Wang and Jinyu Zhang and Hideki Oka",

year = "2004",

language = "英语",

pages = "1053--1056",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - Defects in ion implantation and annealing studied by atomistic model

AU - Yu, Min

AU - Wang, Rong

AU - Ji, Huihui

AU - Shi, Xiaokang

AU - Zhan, Kai

AU - Wang, Yangyuan

AU - Zhang, Jinyu

AU - Oka, Hideki

PY - 2004

Y1 - 2004

N2 - Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of amorphization ion implantation and that of kinetic Monte Carlo method in simulation of annealing. Roughness at amorphous/crystal (a/c) interface is interpreted as transition field and related to the steepness of defects profile. The dissipation of Si extended defects are simulated for both 40kev and 5kev Si implantation. Evolution of extended defects for low energy implantation is well simulated. The simulation indicates that at the initial stage of annealing, the density of extended defects should be larger than that predicted by +1 model.

AB - Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of amorphization ion implantation and that of kinetic Monte Carlo method in simulation of annealing. Roughness at amorphous/crystal (a/c) interface is interpreted as transition field and related to the steepness of defects profile. The dissipation of Si extended defects are simulated for both 40kev and 5kev Si implantation. Evolution of extended defects for low energy implantation is well simulated. The simulation indicates that at the initial stage of annealing, the density of extended defects should be larger than that predicted by +1 model.

KW - Annealing

KW - Implantation

KW - Shallow junction

KW - Simulation

UR - https://www.scopus.com/pages/publications/21644462477

M3 - 论文

AN - SCOPUS:21644462477

SP - 1053

EP - 1056

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Defects in ion implantation and annealing studied by atomistic model

Abstract

Conference

Keywords

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