Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction

Weiming Wu; Jiugou Leng; Hailong Mei; Shubin Yang

doi:10.1016/j.jcis.2018.03.022

Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction

Weiming Wu
, Jiugou Leng
, Hailong Mei
, Shubin Yang^*

^*Corresponding author for this work

School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Defect-rich, boron (B) and nitrogen (N) dual-doped and inert B–N covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent B–N bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.

Original language	English
Pages (from-to)	11-16
Number of pages	6
Journal	Journal of Colloid and Interface Science
Volume	521
DOIs	https://doi.org/10.1016/j.jcis.2018.03.022
State	Published - 1 Jul 2018

Keywords

Defect-abundant
Dual-doped graphene
Oxygen reduction reaction

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10.1016/j.jcis.2018.03.022

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title = "Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction",

abstract = "Defect-rich, boron (B) and nitrogen (N) dual-doped and inert B–N covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent B–N bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.",

keywords = "Defect-abundant, Dual-doped graphene, Oxygen reduction reaction",

author = "Weiming Wu and Jiugou Leng and Hailong Mei and Shubin Yang",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Inc.",

year = "2018",

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day = "1",

doi = "10.1016/j.jcis.2018.03.022",

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T1 - Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction

AU - Wu, Weiming

AU - Leng, Jiugou

AU - Mei, Hailong

AU - Yang, Shubin

PY - 2018/7/1

Y1 - 2018/7/1

N2 - Defect-rich, boron (B) and nitrogen (N) dual-doped and inert B–N covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent B–N bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.

AB - Defect-rich, boron (B) and nitrogen (N) dual-doped and inert B–N covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent B–N bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.

KW - Defect-abundant

KW - Dual-doped graphene

KW - Oxygen reduction reaction

UR - https://www.scopus.com/pages/publications/85043510842

U2 - 10.1016/j.jcis.2018.03.022

DO - 10.1016/j.jcis.2018.03.022

M3 - 文章

C2 - 29547784

AN - SCOPUS:85043510842

SN - 0021-9797

VL - 521

SP - 11

EP - 16

JO - Journal of Colloid and Interface Science

JF - Journal of Colloid and Interface Science

ER -

Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction

Abstract

Keywords

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