Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS2 Nanosheets

Shengxue Yang; Jun Kang; Qu Yue; J. M.D. Coey; Chengbao Jiang

doi:10.1002/admi.201500707

Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS₂ Nanosheets

Shengxue Yang
, Jun Kang
, Qu Yue
, J. M.D. Coey
, Chengbao Jiang^*

^*Corresponding author for this work

School of Materials Science and Engineering

University of Antwerp
National University of Defense Technology
Beihang University
Trinity College Dublin

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS₂ nanosheet transistors, influencing the current on/off ratio and mobility.

Original language	English
Article number	1500707
Journal	Advanced Materials Interfaces
Volume	3
Issue number	6
DOIs	https://doi.org/10.1002/admi.201500707
State	Published - 23 Mar 2016

Keywords

field effect transistors
gas-adsorption
photoresponsivity
sulfur-vacancies

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10.1002/admi.201500707

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@article{a88f972153884854ad8fb7f41754d968,

title = "Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS2 Nanosheets",

abstract = "Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS2 nanosheet transistors, influencing the current on/off ratio and mobility.",

keywords = "field effect transistors, gas-adsorption, photoresponsivity, sulfur-vacancies",

author = "Shengxue Yang and Jun Kang and Qu Yue and Coey, \{J. M.D.\} and Chengbao Jiang",

note = "Publisher Copyright: {\textcopyright} 2016 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

month = mar,

day = "23",

doi = "10.1002/admi.201500707",

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issn = "2196-7350",

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T1 - Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS2 Nanosheets

AU - Yang, Shengxue

AU - Kang, Jun

AU - Yue, Qu

AU - Coey, J. M.D.

AU - Jiang, Chengbao

PY - 2016/3/23

Y1 - 2016/3/23

N2 - Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS2 nanosheet transistors, influencing the current on/off ratio and mobility.

AB - Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS2 nanosheet transistors, influencing the current on/off ratio and mobility.

KW - field effect transistors

KW - gas-adsorption

KW - photoresponsivity

KW - sulfur-vacancies

UR - https://www.scopus.com/pages/publications/84956491611

U2 - 10.1002/admi.201500707

DO - 10.1002/admi.201500707

M3 - 文章

AN - SCOPUS:84956491611

SN - 2196-7350

VL - 3

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 6

M1 - 1500707

ER -

Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS₂ Nanosheets

Abstract

Keywords

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