Current-induced magnetization switching in epitaxial L 10-FePt/Cr heterostructures through orbital Hall effect

H. C. Lyu; Y. C. Zhao; J. Qi; G. Yang; W. D. Qin; B. K. Shao; Y. Zhang; C. Q. Hu; K. Wang; Q. Q. Zhang; J. Y. Zhang; T. Zhu; Y. W. Long; H. X. Wei; B. G. Shen; S. G. Wang

doi:10.1063/5.0087562

Current-induced magnetization switching in epitaxial L 1₀-FePt/Cr heterostructures through orbital Hall effect

H. C. Lyu
, Y. C. Zhao^*
, J. Qi
, G. Yang
, W. D. Qin
, B. K. Shao
, Y. Zhang
, C. Q. Hu
, K. Wang
, Q. Q. Zhang
, J. Y. Zhang
, T. Zhu
, Y. W. Long
, H. X. Wei
, B. G. Shen
, S. G. Wang^*

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

University of Science and Technology Beijing
CAS - Institute of Physics
Beijing Normal University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1-x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1-x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1-x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.

Original language	English
Article number	013901
Journal	Journal of Applied Physics
Volume	132
Issue number	1
DOIs	https://doi.org/10.1063/5.0087562
State	Published - 7 Jul 2022

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Lyu, H. C., Zhao, Y. C., Qi, J., Yang, G., Qin, W. D., Shao, B. K., Zhang, Y., Hu, C. Q., Wang, K., Zhang, Q. Q., Zhang, J. Y., Zhu, T., Long, Y. W., Wei, H. X., Shen, B. G., & Wang, S. G. (2022). Current-induced magnetization switching in epitaxial L 1₀-FePt/Cr heterostructures through orbital Hall effect. Journal of Applied Physics, 132(1), Article 013901. https://doi.org/10.1063/5.0087562

@article{241462241d38482f9d028ca052a0eca5,

title = "Current-induced magnetization switching in epitaxial L 10-FePt/Cr heterostructures through orbital Hall effect",

abstract = "The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1-x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1-x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69\% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1-x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.",

author = "Lyu, \{H. C.\} and Zhao, \{Y. C.\} and J. Qi and G. Yang and Qin, \{W. D.\} and Shao, \{B. K.\} and Y. Zhang and Hu, \{C. Q.\} and K. Wang and Zhang, \{Q. Q.\} and Zhang, \{J. Y.\} and T. Zhu and Long, \{Y. W.\} and Wei, \{H. X.\} and Shen, \{B. G.\} and Wang, \{S. G.\}",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = jul,

day = "7",

doi = "10.1063/5.0087562",

language = "英语",

volume = "132",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

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TY - JOUR

T1 - Current-induced magnetization switching in epitaxial L 10-FePt/Cr heterostructures through orbital Hall effect

AU - Lyu, H. C.

AU - Zhao, Y. C.

AU - Qi, J.

AU - Yang, G.

AU - Qin, W. D.

AU - Shao, B. K.

AU - Zhang, Y.

AU - Hu, C. Q.

AU - Wang, K.

AU - Zhang, Q. Q.

AU - Zhang, J. Y.

AU - Zhu, T.

AU - Long, Y. W.

AU - Wei, H. X.

AU - Shen, B. G.

AU - Wang, S. G.

PY - 2022/7/7

Y1 - 2022/7/7

N2 - The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1-x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1-x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1-x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.

AB - The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1-x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1-x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1-x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.

UR - https://www.scopus.com/pages/publications/85133955350

U2 - 10.1063/5.0087562

DO - 10.1063/5.0087562

M3 - 文章

AN - SCOPUS:85133955350

SN - 0021-8979

VL - 132

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013901

ER -

Current-induced magnetization switching in epitaxial L 1₀-FePt/Cr heterostructures through orbital Hall effect

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