Control of ZnO (0001)/Al2O3 (1120) surface morphologies using plasma-assisted molecular beam epitaxy

Huaizhe Xu; Keita Ohtani; Miyuki Yamao; Hideo Ohno

doi:10.1002/pssb.200564657

Control of ZnO (0001)/Al₂O₃ (1120) surface morphologies using plasma-assisted molecular beam epitaxy

Huaizhe Xu^*
, Keita Ohtani
, Miyuki Yamao
, Hideo Ohno

^*Corresponding author for this work

Tohoku University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The surface morphologies of ZnO thin films grown on Al₂O ₃ (112̄0) (a-plane sapphire) substrate by plasma-assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (0001̄) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O₂ flow rate of 0.3 seem. For the growth at 750°C with Zn beam flux of 3.6 × 10 ^-7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn-O along the c-axis of (0001̄) ZnO.

Original language	English
Pages (from-to)	773-777
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	243
Issue number	4
DOIs	https://doi.org/10.1002/pssb.200564657
State	Published - Mar 2006
Externally published	Yes

Access to Document

10.1002/pssb.200564657

Cite this

@article{54188da74c144ca5a3db2d97ab9f7ad6,

title = "Control of ZnO (0001)/Al2O3 (1120) surface morphologies using plasma-assisted molecular beam epitaxy",

abstract = "The surface morphologies of ZnO thin films grown on Al2O 3 (11{\=2}0) (a-plane sapphire) substrate by plasma-assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (000{\=1}) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O2 flow rate of 0.3 seem. For the growth at 750°C with Zn beam flux of 3.6 × 10 -7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn-O along the c-axis of (000{\=1}) ZnO.",

author = "Huaizhe Xu and Keita Ohtani and Miyuki Yamao and Hideo Ohno",

year = "2006",

month = mar,

doi = "10.1002/pssb.200564657",

language = "英语",

volume = "243",

pages = "773--777",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc",

number = "4",

}

TY - JOUR

T1 - Control of ZnO (0001)/Al2O3 (1120) surface morphologies using plasma-assisted molecular beam epitaxy

AU - Xu, Huaizhe

AU - Ohtani, Keita

AU - Yamao, Miyuki

AU - Ohno, Hideo

PY - 2006/3

Y1 - 2006/3

N2 - The surface morphologies of ZnO thin films grown on Al2O 3 (112̄0) (a-plane sapphire) substrate by plasma-assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (0001̄) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O2 flow rate of 0.3 seem. For the growth at 750°C with Zn beam flux of 3.6 × 10 -7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn-O along the c-axis of (0001̄) ZnO.

AB - The surface morphologies of ZnO thin films grown on Al2O 3 (112̄0) (a-plane sapphire) substrate by plasma-assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (0001̄) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O2 flow rate of 0.3 seem. For the growth at 750°C with Zn beam flux of 3.6 × 10 -7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn-O along the c-axis of (0001̄) ZnO.

UR - https://www.scopus.com/pages/publications/33645140029

U2 - 10.1002/pssb.200564657

DO - 10.1002/pssb.200564657

M3 - 文章

AN - SCOPUS:33645140029

SN - 0370-1972

VL - 243

SP - 773

EP - 777

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 4

ER -

Control of ZnO (0001)/Al₂O₃ (1120) surface morphologies using plasma-assisted molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this