Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

Aqing Chen; Kaigui Zhu

doi:10.1016/j.solener.2011.10.015

Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

Aqing Chen
, Kaigui Zhu^*

^*Corresponding author for this work

School of Physics

Beihang University
Leshan Vocational and Technical College

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The p-type a-Si:H/n-type c-Si (P ⁺ a-Si:H/N ⁺ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P ⁺ a-Si:H/N ⁺ c-Si solar cells. With the optimized parameters set, the P ⁺ a-Si:H/N ⁺ c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V _OC: 0.861V, J _SC: 29.32mA/cm ²).

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Solar Energy
Volume	86
Issue number	1
DOIs	https://doi.org/10.1016/j.solener.2011.10.015
State	Published - Jan 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

A-Si/c-Si heterojunction
Photovoltaics
Solar cells
TCO work function

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10.1016/j.solener.2011.10.015

Cite this

@article{9a43fa3a7c7d46cb94df3da7f8f6b181,

title = "Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency",

abstract = "The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849\% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).",

keywords = "A-Si/c-Si heterojunction, Photovoltaics, Solar cells, TCO work function",

author = "Aqing Chen and Kaigui Zhu",

year = "2012",

month = jan,

doi = "10.1016/j.solener.2011.10.015",

language = "英语",

volume = "86",

pages = "393--397",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Ltd",

number = "1",

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TY - JOUR

T1 - Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

AU - Chen, Aqing

AU - Zhu, Kaigui

PY - 2012/1

Y1 - 2012/1

N2 - The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).

AB - The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).

KW - A-Si/c-Si heterojunction

KW - Photovoltaics

KW - Solar cells

KW - TCO work function

UR - https://www.scopus.com/pages/publications/84855204494

U2 - 10.1016/j.solener.2011.10.015

DO - 10.1016/j.solener.2011.10.015

M3 - 文章

AN - SCOPUS:84855204494

SN - 0038-092X

VL - 86

SP - 393

EP - 397

JO - Solar Energy

JF - Solar Energy

IS - 1

ER -

Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

Abstract

UN SDGs

Keywords

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