Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Wang Kang; Chentian Zheng; Yangqi Huang; Xichao Zhang; Yan Zhou; Weifeng Lv; Weisheng Zhao

doi:10.1109/LED.2016.2574916

Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Wang Kang
, Chentian Zheng
, Yangqi Huang
, Xichao Zhang
, Yan Zhou
, Weifeng Lv
, Weisheng Zhao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

Original language	English
Article number	7482654
Pages (from-to)	924-927
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2574916
State	Published - Jul 2016

Keywords

Magnetic skyrmion
domain wall
racetrack memory
voltage manipulation

Access to Document

10.1109/LED.2016.2574916

Cite this

@article{e5aa9c776f5a45b48c6c324dff68164d,

title = "Complementary Skyrmion Racetrack Memory with Voltage Manipulation",

abstract = "Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.",

keywords = "Magnetic skyrmion, domain wall, racetrack memory, voltage manipulation",

author = "Wang Kang and Chentian Zheng and Yangqi Huang and Xichao Zhang and Yan Zhou and Weifeng Lv and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/LED.2016.2574916",

language = "英语",

volume = "37",

pages = "924--927",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Complementary Skyrmion Racetrack Memory with Voltage Manipulation

AU - Kang, Wang

AU - Zheng, Chentian

AU - Huang, Yangqi

AU - Zhang, Xichao

AU - Zhou, Yan

AU - Lv, Weifeng

AU - Zhao, Weisheng

PY - 2016/7

Y1 - 2016/7

N2 - Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

AB - Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

KW - Magnetic skyrmion

KW - domain wall

KW - racetrack memory

KW - voltage manipulation

UR - https://www.scopus.com/pages/publications/84976873336

U2 - 10.1109/LED.2016.2574916

DO - 10.1109/LED.2016.2574916

M3 - 文章

AN - SCOPUS:84976873336

SN - 0741-3106

VL - 37

SP - 924

EP - 927

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7482654

ER -

Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this