@inproceedings{a39bd4f12a60435d9f2c88aeddadf893,
title = "Compact Modeling of SiGe HBTs for design of cryogenic control and readout circuits for quantum computing",
abstract = "A HICUM/L0 compact model is extracted for advanced SiGe HBTs operating at 12 K, targeting potential use for control and readout applications in quantum computing. Due to the presence of transistor non-idealities, extraction procedures are modified from room temperature approaches. The resultant compact model shows good accuracy in both small-signal and large-signal prediction when compared to 12 K measurements for a wideband cryogenic low noise amplifier. Important factors for model accuracy are investigated through sensitivity analysis. This is the first demonstration of a DC, small-signal, and large-signal compact model for SiGe HBTs operating at deep cryogenic temperatures.",
keywords = "compact model, cryogenic electronics, HICUM, quantum computing, Semiconductor device modeling, SiGe HBT",
author = "Hanbin Ying and Rao, \{Sunil G.\} and Teng, \{Jeffrey W.\} and Milad Frounchi and Markus Muller and Xiaodi Jin and Michael Schruter and Cressler, \{John D.\}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 ; Conference date: 16-11-2020 Through 19-11-2020",
year = "2020",
month = nov,
day = "16",
doi = "10.1109/BCICTS48439.2020.9392937",
language = "英语",
series = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020",
address = "美国",
}