CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

Y. Liu; T. P. Chen; M. Yang; Z. H. Cen; X. B. Chen; Y. B. Li; S. Fung

doi:10.1007/s00339-008-5046-5

CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

Y. Liu^*
, T. P. Chen
, M. Yang
, Z. H. Cen
, X. B. Chen
, Y. B. Li
, S. Fung

^*Corresponding author for this work

University of Electronic Science and Technology of China
Nanyang Technological University
Harbin Institute of Technology
The University of Hong Kong

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10^-5 s. No obvious change in the light emission intensity was observed after 10⁶ pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration.

Original language	English
Pages (from-to)	753-756
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	95
Issue number	3
DOIs	https://doi.org/10.1007/s00339-008-5046-5
State	Published - Jun 2009
Externally published	Yes

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title = "CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals",

abstract = "Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10-5 s. No obvious change in the light emission intensity was observed after 106 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration.",

author = "Y. Liu and Chen, \{T. P.\} and M. Yang and Cen, \{Z. H.\} and Chen, \{X. B.\} and Li, \{Y. B.\} and S. Fung",

year = "2009",

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doi = "10.1007/s00339-008-5046-5",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

AU - Liu, Y.

AU - Chen, T. P.

AU - Yang, M.

AU - Cen, Z. H.

AU - Chen, X. B.

AU - Li, Y. B.

AU - Fung, S.

PY - 2009/6

Y1 - 2009/6

N2 - Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10-5 s. No obvious change in the light emission intensity was observed after 106 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration.

AB - Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10-5 s. No obvious change in the light emission intensity was observed after 106 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration.

UR - https://www.scopus.com/pages/publications/63949086333

U2 - 10.1007/s00339-008-5046-5

DO - 10.1007/s00339-008-5046-5

M3 - 文章

AN - SCOPUS:63949086333

SN - 0947-8396

VL - 95

SP - 753

EP - 756

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

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