Abstract
Chemically manipulated anomalous Hall effect (AHE) and perpendicular magnetic anisotropy (PMA) have been studied in MgO/[Co/Pt] 3 /MgO multilayers by introducing a Mg metal layer between the Co layer and the top MgO layer. It is shown that the saturation anomalous Hall resistivity (ρ AH ) and effective magnetic anisotropy (K eff ) are 125% and 26% larger than those in the multilayers without Mg insertion, respectively. The X-ray photoelectron spectroscopy (XPS) analysis shows that the enhancement of AHE and PMA is primarily ascribed to effective control of chemical states at the Co/MgO interface.
| Original language | English |
|---|---|
| Pages (from-to) | 263-266 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 320 |
| DOIs | |
| State | Published - 30 Nov 2014 |
| Externally published | Yes |
Keywords
- Anomalous Hall effect
- Interface chemical states
- Perpendicular magnetic anisotropy
- X-ray photoelectron spectroscopy
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