Skip to main navigation Skip to search Skip to main content

Characterization of millimeter-wave active and passive components embedded in test fixtures

  • Ghulam Mehdi
  • , Hu Anyong
  • , Zheng Cheng
  • , J. Miao
  • , Abdul Mueed
  • Beihang University
  • CESAT

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The performance of millimeter-wave active and passive components is sensitive to the discontinuities associated with the test fixtures. In order to accurately characterize the device-under-test (DUT) and obtain the DUT only performance, the fixture effects must be removed from the overall measurement. Such process is generally referred to as de-embedding. In this work, different de-embedding methods are reviewed and two of these namely the thru-reflect-line (TRL) and the thru-line (TL) are employed to de-embed an edge-coupled band-pass filter (BPF) and a low noise amplifier (LNA) both operating at Ka band. The two DUTs along with the TRL kit are realized on a substrate with dielectric constant of 6.2. Measured results obtained from the two methods are compared.

Original languageEnglish
Title of host publicationProceedings - 11th International Conference on Frontiers of Information Technology, FIT 2013
Pages136-139
Number of pages4
DOIs
StatePublished - 2013
Event11th International Conference on Frontiers of Information Technology, FIT 2013 - Islamabad, Pakistan
Duration: 16 Dec 201318 Dec 2013

Publication series

NameProceedings - 11th International Conference on Frontiers of Information Technology, FIT 2013

Conference

Conference11th International Conference on Frontiers of Information Technology, FIT 2013
Country/TerritoryPakistan
CityIslamabad
Period16/12/1318/12/13

Keywords

  • DUT
  • De-embedding
  • Millimter-wave
  • Thru-line
  • Thru-reflect-line

Fingerprint

Dive into the research topics of 'Characterization of millimeter-wave active and passive components embedded in test fixtures'. Together they form a unique fingerprint.

Cite this