@inproceedings{2060c020cc984a75950b7fad61f7f799,
title = "Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs",
abstract = "The dynamic (RF) large-signal operating limits of advanced SiGe HBTs are systematically explored and discussed. Experimental results of long-term RF stress tests performed with a passive load-pull system are presented and analyzed. The experimental data demonstrate that SiGe HBTs are extremely robust and can be operated statically and dynamically far beyond the open-base collector-emitter breakdown voltage without noticeable degradation during the long stress times. The results suggest that only extremely non-linear large-signal operating conditions cause significant degradation of the admittance parameters. RF stress tests of HBTs with different emitter widths suggest that the measured degradation is area-related and can be attributed to the minority carrier charge storage and transport.",
keywords = "breakdown, electrical stress, load-pull, RF reliability, SiGe HBT",
author = "Christoph Weimer and Xiaodi Jin and Fischer, \{Gerhard G.\} and Michael Schroter",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022 ; Conference date: 16-10-2022 Through 19-10-2022",
year = "2022",
doi = "10.1109/BCICTS53451.2022.10051735",
language = "英语",
series = "2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "216--223",
booktitle = "2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022",
address = "美国",
}