Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

Xiaodi Jin; Guangsheng Liang; Markus Muller; Michael Schroter

doi:10.1109/TED.2023.3297564

Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

Xiaodi Jin^*
, Guangsheng Liang
, Markus Muller
, Michael Schroter

^*Corresponding author for this work

Technische Universität Dresden

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

Original language	English
Pages (from-to)	4800-4807
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	9
DOIs	https://doi.org/10.1109/TED.2023.3297564
State	Published - 1 Sep 2023
Externally published	Yes

Keywords

Compact modeling
cryogenic operation
heterojunction bipolar transistor (HBT)
low-temperature electronics
thermal resistance

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10.1109/TED.2023.3297564

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title = "Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature",

abstract = "The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.",

keywords = "Compact modeling, cryogenic operation, heterojunction bipolar transistor (HBT), low-temperature electronics, thermal resistance",

author = "Xiaodi Jin and Guangsheng Liang and Markus Muller and Michael Schroter",

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T1 - Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

AU - Jin, Xiaodi

AU - Liang, Guangsheng

AU - Muller, Markus

AU - Schroter, Michael

PY - 2023/9/1

Y1 - 2023/9/1

N2 - The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

AB - The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

KW - Compact modeling

KW - cryogenic operation

KW - heterojunction bipolar transistor (HBT)

KW - low-temperature electronics

KW - thermal resistance

UR - https://www.scopus.com/pages/publications/85166748813

U2 - 10.1109/TED.2023.3297564

DO - 10.1109/TED.2023.3297564

M3 - 文章

AN - SCOPUS:85166748813

SN - 0018-9383

VL - 70

SP - 4800

EP - 4807

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

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Keywords

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