@inproceedings{60b0da7dc0bc480dbdb879e7cdcbfd03,
title = "Calculation Optimization of Double-Free-Layer Magnetic Tunnel Junction",
abstract = "Double-free-layer magnetic tunnel junctions (DMTJs) demonstrate significant advantages in enhancing thermal stability and reducing critical current. However, they also present challenges in modeling quantum transport within the device because of the quantum well, while few existing researches handle the problem correctly. To tackle these issues, we employ the non-equilibrium Green{\textquoteright}s function (NEGF) method, complemented by a specialized algorithm that balances both accuracy and efficiency.",
keywords = "DMTJ, MRAM, NEGF",
author = "Zifeng Wang and Lang Zeng",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11041432",
language = "英语",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
address = "美国",
}