Bulk-Driven CMOS amplifier with high EMI immunity

Hong Ge Li; Hui Xin Bai; Shu Guo Xie; Dong Lin Su

doi:10.1109/TEMC.2015.2458985

Bulk-Driven CMOS amplifier with high EMI immunity

School of Electronic and Information Engineering

Beihang University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage.The bulkdriven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -Vpp EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.

Original language	English
Article number	7317547
Pages (from-to)	1425-1434
Number of pages	10
Journal	IEEE Transactions on Electromagnetic Compatibility
Volume	57
Issue number	6
DOIs	https://doi.org/10.1109/TEMC.2015.2458985
State	Published - Dec 2015

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title = "Bulk-Driven CMOS amplifier with high EMI immunity",

abstract = "This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage.The bulkdriven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -Vpp EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.",

author = "Li, \{Hong Ge\} and Bai, \{Hui Xin\} and Xie, \{Shu Guo\} and Su, \{Dong Lin\}",

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doi = "10.1109/TEMC.2015.2458985",

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AU - Li, Hong Ge

AU - Bai, Hui Xin

AU - Xie, Shu Guo

AU - Su, Dong Lin

PY - 2015/12

Y1 - 2015/12

N2 - This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage.The bulkdriven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -Vpp EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.

AB - This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage.The bulkdriven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -Vpp EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.

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Bulk-Driven CMOS amplifier with high EMI immunity

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