Building energy-efficient multi-level cell STT-RAM caches with data compression

Spin-transfer torque magnetic random access memory (STT-RAM) technology has emerged as a potential replacement of SRAM in cache design, especially for building large-scale and energy-efficient last level caches. Compared with singlelevel cell (SLC), multi-level cell (MLC) STT-RAM is expected to double cache capacity and increase system performance. However, the two-step read/write access schemes incur considerable energy consumption and performance degradation. In this paper, we propose two techniques using data compression to optimize MLC STT-RAM cache design. The first technique tries to compress a cache line and fit it into only the soft-bit region of the cells, so that reading or writing this cache line takes only one step which is fast and energy-efficient. We introduce a second technique to increase the cache capacity by enabling the left hard-bit region to store another compressed cache line, which can improve the system performance for memory intensive workloads. The experimental results show that, compared with a conventional MLC STT-RAM last level cache design, our overhead minimized technique reduces the dynamic energy consumption by 38.2% on average with the same system performance, and our capacity augmented technique boosts the system performance by 6.1% with 19.2% dynamic energy saving on average, across the evaluated multi-programmed benchmarks.