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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

  • Su Ting Han
  • , Liang Hu
  • , Xiandi Wang
  • , Ye Zhou
  • , Yu Jia Zeng*
  • , Shuangchen Ruan
  • , Caofeng Pan
  • , Zhengchun Peng
  • *Corresponding author for this work
  • Shenzhen University
  • Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number1600435
JournalAdvanced Science
Volume4
Issue number8
DOIs
StatePublished - Aug 2017
Externally publishedYes

Keywords

  • black phosphorus quantum dots
  • flexible memory
  • multilevel datastorage
  • resistive switching
  • tunable memory characteristics

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