Bias effects on structure of sputtered SiC films

M. Wang; A. P. Huang; B. Wang; H. Yan; Z. Y. Yao; A. Morimoto; T. Shimizu

doi:10.1016/S0921-5107(01)00621-3

Bias effects on structure of sputtered SiC films

M. Wang
, A. P. Huang
, B. Wang
, H. Yan^*
, Z. Y. Yao
, A. Morimoto
, T. Shimizu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.

Original language	English
Pages (from-to)	25-27
Number of pages	3
Journal	Materials Science and Engineering: B
Volume	85
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(01)00621-3
State	Published - 6 Aug 2001
Externally published	Yes

Keywords

Bias-assisted
SiC
Sputtering

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10.1016/S0921-5107(01)00621-3

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title = "Bias effects on structure of sputtered SiC films",

abstract = "SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.",

keywords = "Bias-assisted, SiC, Sputtering",

author = "M. Wang and Huang, \{A. P.\} and B. Wang and H. Yan and Yao, \{Z. Y.\} and A. Morimoto and T. Shimizu",

year = "2001",

month = aug,

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doi = "10.1016/S0921-5107(01)00621-3",

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TY - JOUR

T1 - Bias effects on structure of sputtered SiC films

AU - Wang, M.

AU - Huang, A. P.

AU - Wang, B.

AU - Yan, H.

AU - Yao, Z. Y.

AU - Morimoto, A.

AU - Shimizu, T.

PY - 2001/8/6

Y1 - 2001/8/6

N2 - SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.

AB - SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.

KW - Bias-assisted

KW - SiC

KW - Sputtering

UR - https://www.scopus.com/pages/publications/0035817433

U2 - 10.1016/S0921-5107(01)00621-3

DO - 10.1016/S0921-5107(01)00621-3

M3 - 文章

AN - SCOPUS:0035817433

SN - 0921-5107

VL - 85

SP - 25

EP - 27

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1

ER -

Bias effects on structure of sputtered SiC films

Abstract

Keywords

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